公开(公告)号：US20160285018A1

公开(公告)日：2016-09-29

申请号：US15034186

申请日：2014-11-06

Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD.

Inventor： Illani SHAHAL ,  Sharon PECKER ,  Avishal BENYAMINI ,  Jonah WAISMANN ,  Assaf HAMO ,  Maayan HONIG

IPC: H01L51/05 ,  H01L51/10 ,  G01Q70/08 ,  H01L51/00

CPC classification number: H01L51/0558 ,  C01B32/16 ,  H01L22/14 ,  H01L29/0673 ,  H01L29/1029 ,  H01L29/66045 ,  H01L29/772 ,  H01L51/0012 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0031 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/105

Abstract: A method for use in construction of an electronic device and a transistor structure are presented. The method comprising: providing one or more nanotubes grown on a surface of a first substrate; providing a desired electrode arrangement fabricated on a surface of a second substrate. The electrode arrangement comprises at least two elevated source and drain electrodes and one or more gate electrodes located in between said elevated source and drain electrodes. The method also comprises bringing the electrode arrangement on the second substrate to close proximity with the first substrate such that surfaces of the first and second substrates face each other; scanning said first substrate with said electrode arrangement and determining contact of electrodes of the electrode arrangement with a nanotube located on the first substrate; and detaching said nanotube from the first substrate to provide a transistor structure comprising an isolated nanotube between the source and drain electrodes.

Abstract translation: 提出了一种用于构造电子器件和晶体管结构的方法。 该方法包括：提供在第一基底的表面上生长的一个或多个纳米管; 提供制造在第二基板的表面上的期望的电极布置。 电极布置包括至少两个升高的源极和漏极以及位于所述升高的源极和漏极之间的一个或多个栅电极。 所述方法还包括使所述第二基板上的所述电极布置与所述第一基板靠近，使得所述第一和第二基板的表面彼此面对; 用所述电极装置扫描所述第一衬底，并且确定所述电极装置的电极与位于所述第一衬底上的纳米管的接触; 以及从所述第一衬底分离所述纳米管，以提供在所述源极和漏极之间包括隔离纳米管的晶体管结构。