公开(公告)号：US11835413B2

公开(公告)日：2023-12-05

申请号：US17566326

申请日：2021-12-30

Applicant: Yokogawa Electric Corporation

Inventor： Takashi Yoshida ,  Yuusaku Yoshida ,  Atsushi Yumoto ,  Yoshitaka Suzuki

IPC: G01L9/08 ,  G01L9/12 ,  G01L7/08 ,  G01L7/02 ,  G01L9/00

CPC classification number: G01L7/082 ,  G01L7/022 ,  G01L7/08 ,  G01L9/0008 ,  G01L9/0047 ,  Y10T29/4913

Abstract: A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

公开(公告)号：US11243131B2

公开(公告)日：2022-02-08

申请号：US14460684

申请日：2014-08-15

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Takashi Yoshida ,  Yuusaku Yoshida ,  Atsushi Yumoto ,  Yoshitaka Suzuki

IPC: G01L9/08 ,  G01L9/12 ,  G01L7/08 ,  G01L7/02 ,  G01L9/00

Abstract: A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.