公开(公告)号：US09865797B2

公开(公告)日：2018-01-09

申请号：US14446602

申请日：2014-07-30

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Takashi Yoshida ,  Takeshi Mishima ,  Shigeto Iwai ,  Yuusaku Yoshida

IPC: H01L41/083 ,  H01L41/331 ,  H03H3/007 ,  H03H9/10

CPC classification number: H01L41/083 ,  H01L41/331 ,  H03H3/0072 ,  H03H9/1057 ,  Y10T29/42

Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap.

公开(公告)号：US11835413B2

公开(公告)日：2023-12-05

申请号：US17566326

申请日：2021-12-30

Applicant: Yokogawa Electric Corporation

Inventor： Takashi Yoshida ,  Yuusaku Yoshida ,  Atsushi Yumoto ,  Yoshitaka Suzuki

IPC: G01L9/08 ,  G01L9/12 ,  G01L7/08 ,  G01L7/02 ,  G01L9/00

CPC classification number: G01L7/082 ,  G01L7/022 ,  G01L7/08 ,  G01L9/0008 ,  G01L9/0047 ,  Y10T29/4913

Abstract: A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

公开(公告)号：US11243131B2

公开(公告)日：2022-02-08

申请号：US14460684

申请日：2014-08-15

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Takashi Yoshida ,  Yuusaku Yoshida ,  Atsushi Yumoto ,  Yoshitaka Suzuki

IPC: G01L9/08 ,  G01L9/12 ,  G01L7/08 ,  G01L7/02 ,  G01L9/00

Abstract: A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.