METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN
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    发明申请
    METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN 有权
    用于制作大面积纳米图案的方法

    公开(公告)号:US20120156882A1

    公开(公告)日:2012-06-21

    申请号:US13242331

    申请日:2011-09-23

    IPC分类号: H01L21/308

    摘要: A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.

    摘要翻译: 一种制造大面积纳米级图案的方法包括:形成由钝化层隔离的多层主薄膜; 图案化第一主薄膜以形成第一主图案; 相对于所述第一主图形形成第一间隔图案; 以及通过将第一间隔图案转印到第二主薄膜上而形成第二主图案。 通过使用由不同钝化膜分离的多层主薄膜,可以重复地进行能够减小图案间距的间隔光刻,并且在形成微米尺度图案之后,图案间距重复减小而没有形状变形,从而形成纳米级精细图案 均匀地在广泛的地区。