公开(公告)号：US07439575B2

公开(公告)日：2008-10-21

申请号：US11065312

申请日：2005-02-23

申请人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

发明人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  H01L23/552 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.

摘要翻译： SONOS存储器结构的金属前介电结构包括UV光吸收膜，其防止ONO结构响应于紫外线照射而被电荷充电。 在一个实施例中，预金属电介质结构包括位于SONOS存储器结构之上的第一预金属电介质层，位于第一预金属介电层上方的光吸收结构和位于第一金属前介电层上的第二预金属介电层 光吸收结构。 光吸收结构可以是连续的多晶硅或非晶硅层。 或者，光吸收结构可以包括一个或多个图案化的多晶硅层。 在另一个实施例中，SONOS晶体管包括UV光吸收多晶硅间隔物。

公开(公告)号：US06959920B2

公开(公告)日：2005-11-01

申请号：US10659031

申请日：2003-09-09

申请人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

发明人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

IPC分类号： H01L21/8246 ,  H01L23/552 ,  H01L27/115 ,  H01L29/792

CPC分类号： H01L27/11568 ,  H01L23/552 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.

摘要翻译： SONOS存储器结构的金属前介电结构包括UV光吸收膜，其防止ONO结构响应于紫外线照射而被电荷充电。 在一个实施例中，预金属电介质结构包括位于SONOS存储器结构之上的第一预金属电介质层，位于第一预金属介电层上方的光吸收结构和位于第一金属前介电层上的第二预金属介电层 光吸收结构。 光吸收结构可以是连续的多晶硅或非晶硅层。 或者，光吸收结构可以包括一个或多个图案化的多晶硅层。 在另一个实施例中，SONOS晶体管包括UV光吸收多晶硅间隔物。

公开(公告)号：US20050051838A1

公开(公告)日：2005-03-10

申请号：US10659031

申请日：2003-09-09

申请人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

发明人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

IPC分类号： H01L21/8246 ,  H01L23/552 ,  H01L27/115 ,  H01L29/792

CPC分类号： H01L27/11568 ,  H01L23/552 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.

公开(公告)号：US07060627B2

公开(公告)日：2006-06-13

申请号：US10659042

申请日：2003-09-09

申请人： Micha Gutman ,  Yakov Roizin ,  Menachem Vofsy ,  Efraim Aloni ,  Avi Ben-Gigi ,  Fumihiko Noro ,  Masatoshi Arai ,  Nobuyoshi Takahashi ,  Koji Yoshida

发明人： Micha Gutman ,  Yakov Roizin ,  Menachem Vofsy ,  Efraim Aloni ,  Avi Ben-Gigi ,  Fumihiko Noro ,  Masatoshi Arai ,  Nobuyoshi Takahashi ,  Koji Yoshida

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833

摘要： A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.

摘要翻译： 无场阵列包括半导体衬底，形成在半导体衬底的上表面上的多个氧化物 - 氮化物氧化物（ONO）结构，以及形成在ONO结构上的多个字线，其中每个ONO结构基本上 被一条字线覆盖。 字线（通常为多晶硅）在随后的处理步骤期间阻挡UV照射，从而基本上防止电子被捕获在ONO结构的氮化硅层中。 结果，无栅阵列晶体管的阈值电压随着无栅阵列晶体管的宽度减小而不会严重增加。

公开(公告)号：US20050139903A1

公开(公告)日：2005-06-30

申请号：US11065312

申请日：2005-02-23

申请人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

发明人： Yakov Roizin ,  Efraim Aloni ,  Micha Gutman ,  Menachem Vofsy ,  Avi Ben-Gigi

IPC分类号： H01L21/8246 ,  H01L23/552 ,  H01L27/115 ,  H01L21/4763

CPC分类号： H01L27/11568 ,  H01L23/552 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.

摘要翻译： SONOS存储器结构的金属前介电结构包括UV光吸收膜，其防止ONO结构响应于紫外线照射而被电荷充电。 在一个实施例中，预金属电介质结构包括位于SONOS存储器结构之上的第一预金属电介质层，位于第一预金属介电层上方的光吸收结构和位于第一金属前介电层上的第二预金属介电层 光吸收结构。 光吸收结构可以是连续的多晶硅或非晶硅层。 或者，光吸收结构可以包括一个或多个图案化的多晶硅层。 在另一个实施例中，SONOS晶体管包括UV光吸收多晶硅间隔物。

公开(公告)号：US20050054161A1

公开(公告)日：2005-03-10

申请号：US10659042

申请日：2003-09-09

申请人： Micha Gutman ,  Yakov Roizin ,  Menachem Vofsy ,  Efraim Aloni ,  Avi Ben-Gigi ,  Fumihiko Noro ,  Masatoshi Arai ,  Nobuyoshi Takahashi ,  Koji Yoshida

发明人： Micha Gutman ,  Yakov Roizin ,  Menachem Vofsy ,  Efraim Aloni ,  Avi Ben-Gigi ,  Fumihiko Noro ,  Masatoshi Arai ,  Nobuyoshi Takahashi ,  Koji Yoshida

IPC分类号： H01L21/336 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833

摘要： A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.

摘要翻译： 无场阵列包括半导体衬底，形成在半导体衬底的上表面上的多个氧化物 - 氮化物氧化物（ONO）结构，以及形成在ONO结构上的多个字线，其中每个ONO结构基本上 被一条字线覆盖。 字线（通常为多晶硅）在随后的处理步骤期间阻挡UV照射，从而基本上防止电子被捕获在ONO结构的氮化硅层中。 结果，无栅阵列晶体管的阈值电压随着无栅阵列晶体管的宽度减小而不会严重增加。