公开(公告)号：US5817534A

公开(公告)日：1998-10-06

申请号：US567376

申请日：1995-12-04

申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01L21/67028 ,  H01J37/32862 ,  Y10S438/905

摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.

摘要翻译： 本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生 腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行 在一个表面上去除在晶片加工期间沉积的污染物。 通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。 耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。 电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。 或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。