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公开(公告)号：US20240206167A1
公开(公告)日：2024-06-20
申请号：US18208687
申请日：2023-06-12
发明人： Wenbo Zhang , Kai Yu , Zhiyong Lu , Sheng Peng , Zhaohui Cheng , Zhangyi Li , Jing Gao , Lei Xue
摘要： Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure including alternating first dielectric layers and first conductive layers, an array common source (ACS) film over the first semiconductor structure, a second semiconductor structure over the ACS film, and a channel structure extending in the first semiconductor structure, the ACS film, and the second semiconductor structure in a first direction. The second semiconductor structure includes alternating second dielectric layers and second conductive layers. The channel structure is electrically connected to the ACS film.
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公开(公告)号：US20240196632A1
公开(公告)日：2024-06-13
申请号：US18148849
申请日：2022-12-30
发明人： Sheng Peng , Zhiyong Lu , Wenbo Zhang , Xiaoming Mao , Zhaohui Cheng , Jing Gao , Lei Xue
IPC分类号： H10B80/00
CPC分类号： H10B80/00
摘要： Semiconductor components, fabrication methods thereof and memory systems. A fabrication method includes performing trap repairing on a first wafer at a first temperature, the first wafer including memory cells; bonding the first wafer with a second wafer to form a semiconductor component, the second wafer including a device layer; and repairing the semiconductor component at a second temperature lower than the first temperature.
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