公开(公告)号：US5374382A

公开(公告)日：1994-12-20

申请号：US592366

申请日：1990-10-03

申请人： Akira Nishiwaki ,  Yasuo Moroboshi ,  Atsushi Saito ,  Kazuhiro Fukuda

发明人： Akira Nishiwaki ,  Yasuo Moroboshi ,  Atsushi Saito ,  Kazuhiro Fukuda

IPC分类号： B01J3/00 ,  C09B67/02 ,  B29B9/00

CPC分类号： C09B67/0097 ,  B01J3/006

摘要： The invention provides a method of producing ultra-fine particles and an apparatus therefor. A particle carrier is moved in a chamber which is decompresed and charged with inert gas. An evaporable material is heated so as to deposit evaporated ultra-fine particles onto a part of the moving particle carrier. The deposited ultra-fine particles are collected from the part of the moving particle carrier while evaporated ultra-fine particles deposit onto another part of the moving particle carrier.

摘要翻译： 本发明提供一种生产超细颗粒的方法及其设备。 颗粒载体在被分解并且装有惰性气体的室中移动。 将蒸发的材料加热以将蒸发的超细颗粒沉积在移动的颗粒载体的一部分上。 从移动颗粒载体的一部分收集沉积的超细颗粒，同时蒸发的超细颗粒沉积到移动颗粒载体的另一部分上。

公开(公告)号：US4601922A

公开(公告)日：1986-07-22

申请号：US649858

申请日：1984-09-12

申请人： Yasuo Moroboshi ,  Akira Nishiwaki

发明人： Yasuo Moroboshi ,  Akira Nishiwaki

IPC分类号： C23C14/04 ,  C23C14/24 ,  G03G5/12 ,  C23C16/00

CPC分类号： G03G5/12 ,  C23C14/042 ,  C23C14/24

摘要： A method of forming a thin layer on a substrate by vapor deposition wherein particles of the material to be constituted the thin layer are caused to fly in such a direction that they reach the surface of the substrate at substantially a right angle relative to the latter. The substrate is located opposite to a particle generating source. A shield device with a slit is provided in the proximity of the substrate located opposite to the particle generating source and between the substrate and the particle generating source so that they are introduced onto the surface of the substrate through the slit at substantially a right angle relative to the surface of the substrate.

摘要翻译： 通过气相沉积在基板上形成薄层的方法，其中使构成薄层的材料的颗粒沿其相对于基板以基本上直角到达基板表面的方向飞行。 衬底位于与颗粒发生源相对的位置。 具有狭缝的屏蔽装置设置在与颗粒产生源相对的基板附近以及基板和颗粒发生源之间，使得它们以基本上直角相对的方式通过狭缝引入到基板的表面上 到基底的表面。