公开(公告)号：US20070076942A1

公开(公告)日：2007-04-05

申请号：US10554087

申请日：2004-04-20

申请人： Yasuo Yatsugake ,  Hitoshi Kato ,  Moyuru Yasuhara ,  Takashi Irie

发明人： Yasuo Yatsugake ,  Hitoshi Kato ,  Moyuru Yasuhara ,  Takashi Irie

IPC分类号： G06K9/00

CPC分类号： G01N21/9501 ,  G01N21/94

摘要： The present invention provides a system capable of automatically making a diagnosis of a semiconductor device manufacturing apparatus, based on a result of particle detection on a substrate such as a semiconductor wafer. In one preferred embodiment, the surface of the wafer is divided into square-shaped minute areas of 0.1 mm to 0.5 mm, and existence of particles in each minute area is inspected. Based on the inspection result, data, in which existence of particles in each minute area is correlated with the address thereof, is created. The surface of the wafer is divided into several tens to several hundreds of evaluation areas. A binarized data is assigned to each evaluation area, and is determined based on the fact that the number of the minute areas in which particles are detected included in the evaluation area is larger, or not larger than a predetermined reference value. A correspondence table, showing the relationship between binarized data arrangements and the causes of particle adhesion, which is made based on empirical rules or experimental results, is prepared. By applying the binarized data made based on the inspection result to the correspondence table, the cause of particle adhesion can be identified.

摘要翻译： 本发明提供一种能够基于半导体晶片等基板上的粒子检测结果自动进行半导体装置制造装置的诊断的系统。 在一个优选实施例中，将晶片的表面分成0.1mm至0.5mm的方形微小区域，并且检查每个微小区域中的颗粒的存在。 基于检查结果，创建了每个微小区域中的粒子的存在与其地址相关联的数据。 晶片的表面分为几十到几百个评估区域。 将二值化数据分配给每个评估区域，并且基于包括在评估区域中的检测粒子的微小区域的数量较大或不大于预定参考值的事实来确定。 准备了基于经验规则或实验结果的二值化数据配置与颗粒粘附原因之间的关系的对应表。 通过将基于检查结果的二值化数据应用于对应表，可以确定颗粒附着的原因。

公开(公告)号：US06329643B1

公开(公告)日：2001-12-11

申请号：US09653460

申请日：2000-08-31

申请人： Fujio Suzuki ,  Koichi Sakamoto ,  Wenling Wang ,  Moyuru Yasuhara

发明人： Fujio Suzuki ,  Koichi Sakamoto ,  Wenling Wang ,  Moyuru Yasuhara

IPC分类号： H05B102

CPC分类号： H01L21/67253 ,  C30B25/10 ,  C30B31/12 ,  F27D19/00 ,  H01L21/67248

摘要： A second vertical heat treating apparatus is temperature-calibrated based on a heat treatment result obtained by a first vertical heat treating apparatus for reference. First, temperature measurement wafers is heated in the first apparatus to obtain set values of temperature controllers for a target value of temperature. Then, wafers are subjected to an oxidizing process in the first apparatus by using these set values to form an oxide film. The thickness of the oxide film is measured and recorded as a reference film thickness. Then, wafers are subjected to an oxidizing process in a second apparatus at temperatures near the target value to form an oxide film. The thickness of the oxide film is measured, and difference in thickness between the oxide film formed in the second apparatus and the reference film thickness is obtained. The oxidizing process in the second apparatus is repeated to obtain set values of temperature controllers for the second apparatus at the time when the difference in film thickness becomes zero. The second apparatus is temperature-calibrated on the basis of the set value thus obtained.

摘要翻译： 基于由第一垂直热处理装置获得的热处理结果进行参考的第二垂直热处理装置进行温度校准。 首先，在第一装置中加热温度测量晶片，以获得目标温度值的温度控制器的设定值。 然后，通过使用这些设定值在第一装置中对晶片进行氧化处理，形成氧化膜。 氧化膜的厚度被测量并记录为参考膜厚度。 然后，在靠近目标值的温度下，在第二装置中对晶片进行氧化处理，以形成氧化膜。 测量氧化膜的厚度，并且获得在第二装置中形成的氧化膜之间的厚度差和参考膜厚度。 重复第二装置中的氧化处理，以获得当膜厚度差为零时第二装置的温度控制器的设定值。 基于由此获得的设定值对第二装置进行温度校准。

公开(公告)号：US06803548B2

公开(公告)日：2004-10-12

申请号：US09950876

申请日：2001-09-13

申请人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey ,  Mark Erickson

发明人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey ,  Mark Erickson

IPC分类号： H05B102

CPC分类号： H01L21/67109 ,  C23C16/46 ,  C23C16/52 ,  C30B31/18 ,  F27D19/00 ,  F27D21/0014 ,  G05D23/1932 ,  H01L21/67248

摘要： A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed that can estimate correct temperatures of the objects-to-be-processed. A reaction tube includes heaters and temperature sensors, and receives a wafer boat. A controller estimates temperatures of wafers and temperatures of the temperature sensors in zones in the reaction tube corresponding to the heaters by using the temperature sensors and electric powers of the heaters. Based on relationships between estimated temperatures of the temperature sensors and really metered temperatures, functions expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures. Electric powers to be fed to the respective heaters are respectively controlled so that the corrected wafer temperatures are converged to target temperature trajectories.

摘要翻译： 一种用于进行热处理的热处理装置，同时估计能够估计被处理物体的正确温度的待处理物体的温度。 反应管包括加热器和温度传感器，并接收晶片舟。 控制器通过使用温度传感器和加热器的电力来估计对应于加热器的反应管中的晶片温度和温度传感器的温度。 基于温度传感器的估计温度和真正计量温度之间的关系，给出了各个区域表达估计温度和真实计量温度之间的关系的函数。 功能由估计的晶片温度代替，以校正估计的晶片温度。 分别控制供给到各个加热器的电力，使得校正的晶片温度收敛到目标温度轨迹。

公开(公告)号：US06730885B2

公开(公告)日：2004-05-04

申请号：US09897908

申请日：2001-07-05

申请人： Fujio Suzuki ,  Wenling Wang ,  Koichi Sakamoto ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey

发明人： Fujio Suzuki ,  Wenling Wang ,  Koichi Sakamoto ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey

IPC分类号： H05B302

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read. If a deposition process is started, the output of a temperature sensor S and the model are used for estimating the temperature of the wafers W in the reaction tube 2, and the powers to be supplied to the heaters 31 through 35 are separately controlled so that the estimated temperature approaches the target temperature trajectory.

摘要翻译： 提供能够适当应对多产品小批量生产的批式热处理系统，控制方法和热处理方法。反应管2包括多个加热器31至35和多个温度传感器，以及 在其中容纳晶片舟23.控制部分100存储许多用于根据安装在晶片舟23上的晶片W的数量和布置位置来估计（计算）反应管2中的晶片W的温度的数学模型 ，以及许多目标温度轨迹。 如果晶片舟23装载在反应管2中，则读取与安装的晶片W的数量和排列位置对应的数学模型和目标温度轨迹。 如果开始沉积工艺，则使用温度传感器S和模型的输出来估计反应管2中的晶片W的温度，并且分别控制供给到加热器31至35的功率，使得 估计的温度接近目标温度轨迹。

公开(公告)号：US07138607B2

公开(公告)日：2006-11-21

申请号：US10871277

申请日：2004-06-21

申请人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara

发明人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara

IPC分类号： F27B5/14

CPC分类号： H01L22/20 ,  H01L21/3185 ,  H01L21/324 ,  Y10S438/907 ,  Y10S438/909 ,  Y10S438/935

摘要： The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

摘要翻译： 本发明是一种根据各自对应的设定温度曲线来确定控制多个组的各个衬底温度的方法的设定温度曲线的方法。 本发明包括第一热处理步骤，根据分类为多个组的第一批衬底的各自的预定临时设定温度曲线来控制多个组的各个衬底温度，以及引入工艺气体以进行 热处理以在基材上形成薄膜; 测量形成在基板上的膜的厚度的第一膜厚测量步骤; 以及第一设定温度曲线修正步骤，分别基于所测量的厚度修正临时设定温度曲线，使得在加热过程中形成的薄膜的厚度在多个组之间基本相同。

公开(公告)号：US06787377B2

公开(公告)日：2004-09-07

申请号：US10333585

申请日：2003-01-24

申请人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara

发明人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Moyuru Yasuhara

IPC分类号： G01R3126

CPC分类号： H01L22/20 ,  H01L21/3185 ,  H01L21/324 ,  Y10S438/907 ,  Y10S438/909 ,  Y10S438/935

摘要： The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups. In the first heat processing step, the provisional set temperature profiles are profiles whose set temperatures change as time passes.

公开(公告)号：US06495805B2

公开(公告)日：2002-12-17

申请号：US09933671

申请日：2001-08-22

申请人： Koichi Sakamoto ,  Wenling Wang ,  Fujio Suzuki ,  Moyuru Yasuhara ,  Keisuke Suzuki

发明人： Koichi Sakamoto ,  Wenling Wang ,  Fujio Suzuki ,  Moyuru Yasuhara ,  Keisuke Suzuki

IPC分类号： H05B302

CPC分类号： H01L21/67757 ,  H01L21/67248 ,  H01L21/67781

摘要： This invention is a method of determining set temperature trajectories for a heat treatment system that conducts a first heat treatment process and a second heat treatment process to an object to be processed. The method comprises the steps of: conducting the first heat treatment process to a first test object to be processed, by using a temporary first set temperature trajectory; measuring a result of the first heat treatment process produced on the first test object to be processed; and determining a first set temperature trajectory for the first heat treatment process by correcting the temporary first set temperature trajectory on the basis of the measured result of the first heat treatment process. The method also comprises the steps of: conducting the second heat treatment process to a second test object to be processed to which the first heat treatment process has been conducted by using the determined first set temperature trajectory, by using a temporary second set temperature trajectory; measuring a result of the first heat treatment process and the second heat treatment process produced on the second test object to be processed; and determining a second set temperature trajectory for the second heat treatment process by correcting the temporary second set temperature trajectory on the basis of the measured result of the first heat treatment process and the second heat treatment process.

摘要翻译： 本发明是一种确定对待处理物体进行第一热处理和第二热处理的热处理系统的设定温度轨迹的方法。 该方法包括以下步骤：通过使用临时的第一设定温度轨迹对待处理的第一测试对象进行第一热处理过程; 测量在待处理的第一测试对象上产生的第一热处理过程的结果; 以及通过基于第一热处理过程的测量结果校正临时第一设定温度轨迹来确定用于第一热处理过程的第一设定温度轨迹。 该方法还包括以下步骤：通过使用临时第二设定温度轨迹，通过使用所确定的第一设定温度轨迹，将第二热处理过程执行到已经进行了第一热处理过程的待处理的第二测试对象; 测量在待处理的第二测试对象上产生的第一热处理过程和第二热处理过程的结果; 以及通过基于第一热处理过程和第二热处理过程的测量结果校正临时第二设定温度轨迹来确定第二热处理过程的第二设定温度轨迹。