公开(公告)号：US5733434A

公开(公告)日：1998-03-31

申请号：US648696

申请日：1996-05-16

申请人： Yasuyuki Harada ,  Shigeyoshi Netsu ,  Shouichi Miura

发明人： Yasuyuki Harada ,  Shigeyoshi Netsu ,  Shouichi Miura

IPC分类号： B01D61/46 ,  B01J19/10 ,  B08B3/10 ,  B08B3/12 ,  B08B7/00 ,  C02F1/36 ,  C02F1/461 ,  C30B29/06 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308

CPC分类号： H01L21/02052 ,  B08B3/12 ,  B08B7/00 ,  C02F1/4618 ,  H01L21/67057 ,  C02F1/36 ,  C02F2001/46185 ,  C02F2201/4611 ,  C02F2201/46115 ,  C02F2201/46195

摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an acid is replaced with a cleaning treatment with a temporarily acidic pure water which is produced electrolytically by the application of a DC voltage between an anode and a cathode bonded to the surfaces of a hydrogen-ion exchange membrane so that the acidic cleaning treatment can be performed under mild conditions so as to eliminate the troubles unavoidable in the conventional process. The apparatus used therefor comprises a rectangular vessel partitioned into a central anode compartment, in which the wafers are held in a vertical disposition within an upflow of pure water, and a pair of cathode compartments on both sides of the anode compartment by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which an anode plate and a cathode plate are bonded.

摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用酸性水溶液进行清洁的常规步骤被用临时酸化的纯水进行的清洁处理代替，所述临时酸性纯水通过在 阳极和阴极结合到氢离子交换膜的表面，使得酸性清洁处理可以在温和条件下进行，以消除常规方法中不可避免的麻烦。 使用的装置包括分隔成中央阳极室的矩形容器，其中晶片在纯水的上流中保持垂直布置，并且通过一对分隔在阳极室的两侧上的一对阴极室 的氢离子交换膜，其两侧粘合有阳极板和阴极板。