公开(公告)号：US06300251B1

公开(公告)日：2001-10-09

申请号：US09501967

申请日：2000-02-10

申请人： Yelehanka Ramachandramurthy Pradeep ,  Vijakomar Chhagan ,  Henry Gerung

发明人： Yelehanka Ramachandramurthy Pradeep ,  Vijakomar Chhagan ,  Henry Gerung

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/32137 ,  H01L21/32139

摘要： A method for anisotropically etching a partially manufactured semiconductor structure, more specifically, a stacked FET gate structure containing a bottom anti-reflective coating (Barc) layer is described. The structure is covered with a photoresist layer which is patterned to defines the gate region. The processing chemistry is predominantly carbon tetrafluoride, (CF4) with the inclusion of chlorine (Cl2) where fluorine (F) is generated in the plasma as the etchant for the structure. During processing, the wafer is cooled with helium (He) that lowers the wafer temperature and promotes sidewall deposition from the fluorine species which acts as a passivation layer producing a anisotropic or vertical etch profile. The process reduces etch time and results in very repeatable end point control of the Bark etch and poly cap etch improving the control of the structure critical dimensions and improving process throughput. The reduction in the use of fluorine based species reduces any potential environmental impact.

摘要翻译： 描述了用于各向异性蚀刻部分制造的半导体结构的方法，更具体地，描述了包含底部抗反射涂层（Barc）层的层叠FET栅极结构。 该结构被图案化以限定栅极区域的光致抗蚀剂层覆盖。 处理化学主要是四氟化碳（CF4），其包含氯（Cl2），其中在等离子体中产生氟（F）作为结构的蚀刻剂。 在处理过程中，用氦（氦）冷却晶片，从而降低晶片温度并促进作为钝化层的氟物质的侧壁沉积，产生各向异性或垂直蚀刻轮廓。 该方法减少蚀刻时间，并导致巴克蚀刻和聚盖蚀刻的非常可重复的终点控制，从而改善结构关键尺寸的控制并提高工艺流程。 氟类物质的使用减少减少了任何潜在的环境影响。