公开(公告)号：US20060286730A1

公开(公告)日：2006-12-21

申请号：US11154377

申请日：2005-06-15

申请人： Yi-Cheng Liu (Alex Liu) ,  Jiunn-Ren Hwang ,  Wei-Tsun Shiau

发明人： Yi-Cheng Liu (Alex Liu) ,  Jiunn-Ren Hwang ,  Wei-Tsun Shiau

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834

摘要： A semiconductor structure and a method for forming the semiconductor structure are provided. The method for forming a semiconductor structure of the present invention may include the following steps. First, a substrate is provided, wherein a gate is formed over the substrate, and a plurality of offspacers are formed over a sidewall of the gate. Then, a source/drain trench is formed in the substrate at two sides of the gate respectively. Next, an outermost offspacer of the offspacers is removed to expose a flat surface on a surface of the substrate. Thereafter, the source/drain trenches are filled to form a source/drain region. Then, a lightly doped drain (LDD) region is formed in a portion of the substrate under the flat surface.

摘要翻译： 提供半导体结构和形成半导体结构的方法。 本发明的半导体结构的形成方法可以包括以下步骤。 首先，提供衬底，其中在衬底上形成栅极，并且在栅极的侧壁上方形成多个脱离层。 然后，在栅极的两侧分别在衬底中形成源极/漏极沟槽。 接下来，除去离子的最外层的隔离物以露出基底表面上的平坦表面。 此后，填充源极/漏极沟槽以形成源极/漏极区域。 然后，在平坦表面下的基板的一部分中形成轻掺杂漏极（LDD）区域。