公开(公告)号：US20080311743A1

公开(公告)日：2008-12-18

申请号：US12190580

申请日：2008-08-12

申请人： Yi-Fang Cheng ,  Chopin Chou

发明人： Yi-Fang Cheng ,  Chopin Chou

IPC分类号： H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of fabricating an opening or plug is provided. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on the dielectric layer, wherein the film can suppress the outgasing phenomenon of the dielectric layer and prevent the later formed photoresist layer from reacting with the running-off composition component from the dielectric layer. Therefore, the problem of incomplete development due to outgasing of the dielectric layer can be solved. Additionally, in the procedure for forming a plug, before a block layer is forming on a surface of a via, a treatment process is performed to form a film on the surface of the via. Therefore, the problem of having defects inside the block layer caused by outgasing of the dielectric layer can be overcome.

摘要翻译： 提供一种制造开口或插头的方法。 在形成开口的过程中，在电介质层上形成光致抗蚀剂层之前，进行处理工艺以在电介质层上形成膜，其中该膜可以抑制电介质层的退磁现象并防止后来形成 光致抗蚀剂层与来自电介质层的流逝组合物组分反应。 因此，可以解决由于电介质层的消失而导致的不完全发展的问题。 此外，在形成插塞的步骤中，在通孔的表面上形成阻挡层之前，进行处理工艺以在通孔的表面上形成膜。 因此，可以克服由电介质层的延长引起的阻挡层内的缺陷的问题。

公开(公告)号：US07514365B2

公开(公告)日：2009-04-07

申请号：US11164273

申请日：2005-11-16

申请人： Yi-Fang Cheng ,  Chopin Chou

发明人： Yi-Fang Cheng ,  Chopin Chou

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of fabricating an opening or plug. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on the dielectric layer, wherein the film can suppress the outgasing phenomenon of the dielectric layer and prevent the later formed photoresist layer from reacting with the running-off composition component from the dielectric layer. Therefore, the problem of incomplete development due to outgasing of the dielectric layer can be solved. Additionally, in the procedure for forming a plug, before a block layer is forming on a surface of a via, a treatment process is performed to form a film on the surface of the via. Therefore, the problem of having defects inside the block layer caused by outgasing of the dielectric layer can be overcome.

摘要翻译： 一种制造开口或塞子的方法。 在形成开口的过程中，在电介质层上形成光致抗蚀剂层之前，进行处理工艺以在电介质层上形成膜，其中该膜可以抑制电介质层的退磁现象并防止后来形成 光致抗蚀剂层与来自电介质层的流逝组合物组分反应。 因此，可以解决由于电介质层的消失而导致的不完全发展的问题。 此外，在形成插塞的步骤中，在通孔的表面上形成阻挡层之前，进行处理工艺以在通孔的表面上形成膜。 因此，可以克服由电介质层的延长引起的阻挡层内的缺陷的问题。

公开(公告)号：US20070111513A1

公开(公告)日：2007-05-17

申请号：US11164273

申请日：2005-11-16

申请人： Yi-Fang Cheng ,  Chopin Chou

发明人： Yi-Fang Cheng ,  Chopin Chou

IPC分类号： H01L21/4763 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L2221/1063

摘要： A method of fabricating an opening or plug. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on the dielectric layer, wherein the film can suppress the outgasing phenomenon of the dielectric layer and prevent the later formed photoresist layer from reacting with the running-off composition component from the dielectric layer. Therefore, the problem of incomplete development due to outgasing of the dielectric layer can be solved. Additionally, in the procedure for forming a plug, before a block layer is forming on a surface of a via, a treatment process is performed to form a film on the surface of the via. Therefore, the problem of having defects inside the block layer caused by outgasing of the dielectric layer can be overcome.

摘要翻译： 一种制造开口或塞子的方法。 在形成开口的过程中，在电介质层上形成光致抗蚀剂层之前，进行处理工艺以在电介质层上形成膜，其中该膜可以抑制电介质层的退磁现象并防止后来形成 光致抗蚀剂层与来自电介质层的流逝组合物组分反应。 因此，可以解决由于电介质层的消失而导致的不完全发展的问题。 此外，在形成插塞的步骤中，在通孔的表面上形成阻挡层之前，进行处理工艺以在通孔的表面上形成膜。 因此，可以克服由电介质层的延长引起的阻挡层内的缺陷的问题。