公开(公告)号：US20090298241A1

公开(公告)日：2009-12-03

申请号：US12536492

申请日：2009-08-06

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L21/336

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

摘要翻译： 公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。 首先，形成用作肋和栅极层的金属层。 接下来，在栅极层上设置荫罩。 之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。 因此，该过程被简化。 由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

公开(公告)号：US07588971B2

公开(公告)日：2009-09-15

申请号：US11778668

申请日：2007-07-17

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L29/786 ,  H01L21/84

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

公开(公告)号：US07638374B2

公开(公告)日：2009-12-29

申请号：US12536492

申请日：2009-08-06

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L21/84 ,  H01L21/786

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

摘要翻译： 公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。 首先，形成用作肋和栅极层的金属层。 接下来，在栅极层上设置荫罩。 之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。 因此，该过程被简化。 由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

公开(公告)号：US20080014686A1

公开(公告)日：2008-01-17

申请号：US11778668

申请日：2007-07-17

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

摘要翻译： 公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。 首先，形成用作肋和栅极层的金属层。 接下来，在栅极层上设置荫罩。 之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。 因此，该过程被简化。 由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

公开(公告)号：US07741163B2

公开(公告)日：2010-06-22

申请号：US11309735

申请日：2006-09-19

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： H01L21/00

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

摘要翻译： 提供一种制造薄膜晶体管的方法。 栅极形成在基板上。 在基板上形成栅极绝缘体以覆盖栅极。 源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。 在源极/漏极层上形成隔离层，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

公开(公告)号：US07851800B2

公开(公告)日：2010-12-14

申请号：US12345666

申请日：2008-12-30

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： H01L31/00

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

摘要翻译： 提供TFT和OLED装置。 TFT包括衬底，栅极，栅极绝缘体，源极/漏极层，隔离层和沟道层。 栅极设置在基板上。 栅极绝缘体设置在基板上并覆盖栅极。 源极/漏极层设置在栅极绝缘体上，并且将栅极绝缘体的一部分暴露在栅极上方。 隔离层设置在源极/漏极层上并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层设置在隔离层的开口中。 此外，沟道层由开口露出并且电连接到源极/漏极层。 另一方面，OLED器件主要包括驱动电路和有机电致发光单元。

公开(公告)号：US20090102375A1

公开(公告)日：2009-04-23

申请号：US12345666

申请日：2008-12-30

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： H01L29/08 ,  H01L29/00 ,  H01J1/62

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

摘要翻译： 提供TFT和OLED装置。 TFT包括衬底，栅极，栅极绝缘体，源极/漏极层，隔离层和沟道层。 栅极设置在基板上。 栅极绝缘体设置在基板上并覆盖栅极。 源极/漏极层设置在栅极绝缘体上，并且将栅极绝缘体的一部分暴露在栅极上方。 隔离层设置在源极/漏极层上，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层设置在隔离层的开口中。 此外，沟道层由开口露出并且电连接到源极/漏极层。 另一方面，OLED器件主要包括驱动电路和有机电致发光单元。

公开(公告)号：US20070160813A1

公开(公告)日：2007-07-12

申请号：US11309735

申请日：2006-09-19

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： G03G7/00

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

摘要翻译： 提供一种制造薄膜晶体管的方法。 栅极形成在基板上。 在基板上形成栅极绝缘体以覆盖栅极。 源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。 在源极/漏极层上形成隔离层，并且具有用于暴露栅绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

公开(公告)号：US20090117686A1

公开(公告)日：2009-05-07

申请号：US12350931

申请日：2009-01-08

申请人： Liang-Ying Huang ,  Tsung-Hsien Lin ,  Hsiang-Yuan Cheng ,  Tarng-Shiang Hu

发明人： Liang-Ying Huang ,  Tsung-Hsien Lin ,  Hsiang-Yuan Cheng ,  Tarng-Shiang Hu

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L51/0018

摘要： A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.

摘要翻译： 制造有机半导体器件的方法包括以下步骤。 在基板上形成栅极导电层，然后形成栅极电介质层。 接下来，在栅极导电层旁边的栅极电介质层上形成图案化的金属层。 然后在每个图案化金属层的表面和侧壁上形成电极改性层，并且其上形成的图案化金属层和电极改性层用作源极和漏极。 此后，在源极和漏极以及暴露在源极和漏极之间的栅极电介质层的一部分上形成有机半导体层为有源层。

公开(公告)号：US20090061560A1

公开(公告)日：2009-03-05

申请号：US12270863

申请日：2008-11-14

申请人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

发明人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

IPC分类号： H01L21/50

CPC分类号： H01L51/5253 ,  H01L51/525 ,  H01L2251/5338

摘要： A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a spacing material layer on the flexible substrate; patterning the spacing material layer to form a patterned spacing layer; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

摘要翻译： 提供了一种有机电子器件的制造方法。 该方法包括：提供柔性基底; 在柔性基板上制造多个有机元件; 在柔性基板上沉积间隔材料层; 图案化间隔材料层以形成图案化间隔层; 以及在图案化的间隔层上布置盖基板，并用密封剂密封柔性基板和盖基板的边缘，其中图案化的间隔层用于保持柔性基板和盖基板之间的空间。