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公开(公告)号:US20240066618A1
公开(公告)日:2024-02-29
申请号:US18387093
申请日:2023-11-06
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
CPC classification number: B23K1/015 , B23K1/008 , B23K3/085 , H01L24/742 , H01L24/75 , B23K2101/42
Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
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公开(公告)号:US11850672B2
公开(公告)日:2023-12-26
申请号:US17872320
申请日:2022-07-25
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
IPC: B23K1/015 , B23K1/008 , B23K3/08 , H01L23/00 , B23K101/42 , B23K101/40 , B23K1/012 , H01L21/60 , B23K1/00
CPC classification number: B23K1/015 , B23K1/008 , B23K3/085 , H01L24/742 , H01L24/75 , B23K1/0016 , B23K1/012 , B23K2101/40 , B23K2101/42 , H01L2021/60007 , H01L2021/6027 , H01L2021/60135 , H01L2224/75272 , H01L2224/75283
Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
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公开(公告)号:US20230060603A1
公开(公告)日:2023-03-02
申请号:US17872320
申请日:2022-07-25
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.
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公开(公告)号:US11465225B1
公开(公告)日:2022-10-11
申请号:US17692760
申请日:2022-03-11
Applicant: Yield Engineering Systems, Inc.
Inventor: Lei Jing , M Ziaul Karim , Kenneth Sautter , Kang Song
IPC: B23K1/015 , B23K1/008 , B23K3/08 , H01L23/00 , B23K101/42 , B23K101/40 , B23K1/012 , H01L21/60 , B23K1/00
Abstract: A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.
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公开(公告)号:US11456274B1
公开(公告)日:2022-09-27
申请号:US17686514
申请日:2022-03-04
Applicant: Yield Engineering Systems, Inc.
Inventor: M Ziaul Karim , Lei Jing , Kenneth Sautter
IPC: H01L23/00 , B23K1/008 , B23K37/04 , B23K101/40 , B23K101/42 , B23K1/015 , B23K1/012 , B23K1/00
Abstract: A method of using an oven includes supporting a substrate on a rotatable spindle in a processing chamber of the oven and rotating the substrate. The method may also include raising the spindle with the substrate to a heating zone and activating a lamp assembly to heat a top surface of the substrate. The substrate may then be lowered to a dosing zone and a chemical vapor directed into the processing chamber above the substrate. The substrate may then be further heated using the lamp assembly and cooled.
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