公开(公告)号：US07893791B2

公开(公告)日：2011-02-22

申请号：US12256321

申请日：2008-10-22

申请人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

发明人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

IPC分类号： H01P1/10 ,  H01P5/12

CPC分类号： H01P1/15

摘要： Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

摘要翻译： 提供了用于选择性地切换信号的使用基于氮化镓（GaN）的晶体管的器件和系统。 第一传输线被配置为连接公共连接和第一连接。 第一基于氮化镓的（GaN基）晶体管具有在第一点处耦合到第一传输线的第一端子，耦合到相对地的第二端子，以及被配置为耦合到第一控制连接 。 第二GaN基晶体管具有在第二点处耦合到第一传输线的第一端子，被配置为耦合到相对地的第二端子，以及被配置为耦合到第一控制连接的第三端子。

公开(公告)号：US20100097119A1

公开(公告)日：2010-04-22

申请号：US12256321

申请日：2008-10-22

申请人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

发明人： Yin Tat Ma ,  Jonathan Hacker ,  Karim S. Boutros

IPC分类号： H03K17/687

CPC分类号： H01P1/15

摘要： Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

摘要翻译： 提供了用于选择性地切换信号的使用基于氮化镓（GaN）的晶体管的器件和系统。 第一传输线被配置为连接公共连接和第一连接。 第一基于氮化镓的（GaN基）晶体管具有在第一点处耦合到第一传输线的第一端子，耦合到相对地的第二端子，以及被配置为耦合到第一控制连接 。 第二GaN基晶体管具有在第二点处耦合到第一传输线的第一端子，被配置为耦合到相对地的第二端子，以及被配置为耦合到第一控制连接的第三端子。

公开(公告)号：US07423490B2

公开(公告)日：2008-09-09

申请号：US11395827

申请日：2006-03-31

申请人： Yin Tat Ma ,  Jonathan Bruce Hacker

发明人： Yin Tat Ma ,  Jonathan Bruce Hacker

IPC分类号： H03F3/191

CPC分类号： H03H7/075

摘要： An n-stage RF choke comprises a series connection of two or more inductors connected in series between a source and a load. The inductor closest to the source has the largest inductance and the inductance closest to the load has the smallest inductance. The inductances of any inductors between the inductor closest to the supply and the inductor closest to the load decrease as a function of distance from the supply. The junctions between the inductors in the series connection are shunted to ground by capacitors connected in series with resistors that provide a matched termination for increasing bandwidth by lowering circuit Q factors and eliminating resonant frequencies. The capacitor closest to the supply has the largest capacitance and the capacitor closest to the load has the smallest capacitance. Any intermediate capacitors decrease in capacitance as a function of distance from the supply. Such an arrangement provides a high impedance that isolates the load from the supply at a wide range of frequencies.

摘要翻译： n级RF扼流圈包括在源极和负载之间串联连接的两个或更多个电感器的串联连接。 最靠近源极的电感具有最大的电感，最靠近负载的电感具有最小的电感。 最靠近电源的电感器和最靠近负载的电感器之间的任何电感器的电感随着电源距离的减小而减小。 串联电感器之间的接点通过与电阻器串联连接的电容器分流到地，这些电阻器通过降低电路Q因数并消除谐振频率来提供匹配的端接以提高带宽。 最靠近电源的电容具有最大的电容，最靠近负载的电容具有最小的电容。 任何中间电容器都会随着电源距离的减小而减小。 这种布置提供了高阻抗，其在宽范围的频率下将负载与电源隔离。

公开(公告)号：US07408752B2

公开(公告)日：2008-08-05

申请号：US11755631

申请日：2007-05-30

申请人： Yin Tat Ma ,  Guann Pyng Li

发明人： Yin Tat Ma ,  Guann Pyng Li

IPC分类号： H02H9/00 ,  H02H3/20 ,  H02H9/04 ,  H02H3/22 ,  H02H7/00

CPC分类号： H01L27/0255 ,  H01L27/0259

摘要： A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.

摘要翻译： 公开了用于复合半导体功率放大器的低负载电容片上静电放电（ESD）保护电路，其不会降低电路RF性能。 公开了其关于电容负载，漏电流，RF性能劣化的操作和仿真结果原理。 详细介绍了频率的设计，负载效应，过程鲁棒性和温度变化以及RF功率放大器的应用。 ESD电路在ESD浪涌期间通过耦合到输入的二极管串耦合输入到地，以及晶体管开关或达林顿对，其栅极耦合到二极管串并由二极管串触发。 当通过与二极管串并联的低阻抗路径触发时，达林顿对将输入耦合到地。 反向二极管也将接地连接到反向浪涌的输入。

公开(公告)号：US07280332B2

公开(公告)日：2007-10-09

申请号：US10501651

申请日：2003-01-16

申请人： Yin Tat Ma ,  Guann-Pyng Li

发明人： Yin Tat Ma ,  Guann-Pyng Li

IPC分类号： H02H3/20 ,  H02H9/04

CPC分类号： H01L27/0255 ,  H01L27/0259

摘要： A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF Power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.

摘要翻译： 公开了用于复合半导体功率放大器的低负载电容片上静电放电（ESD）保护电路，其不会降低电路RF性能。 公开了其关于电容负载，漏电流，RF性能劣化的操作和仿真结果原理。 详细介绍了频率的设计，负载效应，过程的鲁棒性和温度变化以及RF功率放大器的应用。 ESD电路在ESD浪涌期间通过耦合到输入的二极管串耦合输入到地，以及晶体管开关或达林顿对，其栅极耦合到二极管串并由二极管串触发。 当通过与二极管串并联的低阻抗路径触发时，达林顿对将输入耦合到地。 反向二极管也将接地连接到反向浪涌的输入。