公开(公告)号：US06669990B2

公开(公告)日：2003-12-30

申请号：US09985690

申请日：2001-11-05

申请人： Yo Sep Min ,  Dae Sig Kim ,  Young Jin Cho ,  Jung Hyun Lee

发明人： Yo Sep Min ,  Dae Sig Kim ,  Young Jin Cho ,  Jung Hyun Lee

IPC分类号： C23C1640

CPC分类号： C23C16/45553 ,  C30B25/02 ,  C30B29/32

摘要： An atomic layer deposition method which comprises forming a metal oxide thin film by using, as a group IV metal precursor, a complex of a formula M(L)2 in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-4 alkyl group; and R3 is a linear or branched C1-5 alkylene group. The group IV metal precursor exhibits excellent thermal and chemical stabilities under a carrier gas atmosphere, whereas it has high reactivity with a reaction gas.

摘要翻译： 一种原子层沉积方法，其包括通过使用其中M是具有+4的电荷的IV族金属离子和L电荷的式M（L）2的式IV化合物前体，形成金属氧化物薄膜 是具有-2的电荷的三齿配体，所述配体由下式（I）表示：其中R 1和R 2各自独立地是直链或支链C 1-4烷基; 并且R 3是直链或支链C 1-5亚烷基。 IV族金属前体在载气气氛下表现出优异的热稳定性和化学稳定性，而与反应气体具有高反应性。

公开(公告)号：US06689427B2

公开(公告)日：2004-02-10

申请号：US09933736

申请日：2001-08-22

申请人： Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

发明人： Yo Sep Min ,  Young Jin Cho ,  Dae Sig Kim ,  Ik Mo Lee ,  Sun Kwon Lim ,  Wan In Lee ,  Bo Hyun Choi

IPC分类号： C23C1600

CPC分类号： C23C16/409 ,  C07C225/14

摘要： An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.

摘要翻译： 用于形成金属氧化物薄膜的式M（L）2的有机金属前体，其中M是电荷为+4的第IV族金属离子，L为带电荷的三齿配体， 配体由下式（I）表示：其中R 1和R 2各自独立地为直链或支链C 1-8烷基; 且R 3为直链或支链C 1-8亚烷基。 还公开了一种化学气相沉积方法，其中使用有机金属前体在基板上形成金属氧化物薄膜。 前体表现出优异的挥发性，热性质和水解稳定性，特别适用于沉积含有IV族金属如钛的多组分金属氧化物薄膜。