公开(公告)号：US5837644A

公开(公告)日：1998-11-17

申请号：US712602

申请日：1996-09-13

申请人： Yoichiro Nakanishi ,  Takako Honjoh ,  Kuniaki Honjo

发明人： Yoichiro Nakanishi ,  Takako Honjoh ,  Kuniaki Honjo

IPC分类号： B01J20/20 ,  B01J20/32 ,  C01B31/08 ,  C02F1/28 ,  B01J20/02

CPC分类号： B01J20/20 ,  B01J20/28023 ,  B01J20/3204 ,  B01J20/3246 ,  C01B31/084 ,  C02F1/283 ,  B01J2220/4812 ,  C02F2103/06

摘要： A surface hydrophobic active carbon is disclosed which has undergone a treatment with trimethyl chlorosilane and exhibits a silicon concentration on the surface thereof, Si.sub.2p /C.sub.1s, in the range of 0.005-0.03 as determined by X-ray photoelectron spectroscopy and a humidity for starting adsorption of water in the range of 45-60% as determined from the equilibrium adsorbed water content curve, and a method for the production of a surface hydrophobic active carbon is disclosed which comprises exposing active carbon to trimethyl chlorosilane, allowing the exposure to continue for a prescribed length of time, evacuating the ambience, thereby removing excess amount of trimethyl chlorosilane, and subsequently heating the active carbon under a vacuum.

摘要翻译： 公开了一种表面疏水活性炭，其经三氯甲硅烷处理，表面硅浓度为Si2p / C1s，通过X射线光电子能谱和起始吸附湿度测定在0.005-0.03范围内 的水从平衡吸附水含量曲线确定的范围为45-60％，并且公开了用于制备表面疏水活性炭的方法，其包括将活性碳暴露于三甲基氯硅烷中，允许暴露持续一 规定的时间长度，疏散环境，从而除去过量的三甲基氯硅烷，随后在真空下加热活性炭。