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798 条记录 (耗时 0.034 秒)

    Recording medium recording and/or reproduction apparatus, recording and/or reproduction method
    2.
    发明授权
    Recording medium recording and/or reproduction apparatus, recording and/or reproduction method 失效
    记录介质记录和/或再现装置，记录和/或再现方法

    公开(公告)号：US07216228B2

    公开(公告)日：2007-05-08

    申请号：US10432855

    申请日：2002-09-27

    申请人： Yoichiro Sako ,  Takashi Sato ,  Takao Ihashi

    发明人： Yoichiro Sako ,  Takashi Sato ,  Takao Ihashi

    IPC分类号： H04K9/00 ,  G06F7/04

    CPC分类号： G11B20/0021 ,  G11B20/00086 ,  G11B20/00115 ,  G11B20/00724 ,  G11B20/0084 ,  G11B20/00855 ,  G11B20/10

    摘要： A method for reproducing a recording medium comprising reading out identification data from a recording medium having recorded thereon data and the identification data, which identification data includes entity identification data and detection data. The detection data is generated using at least the entity identification data and indicates whether or not the entity identification data at least is authentic data. The identification recorded on the recording medium is read out, detection data is generated based on the entity identification data of the identification data as read out and the detection data extracted from the read-out identification data is compared to the generated detection data. When, as a result of comparison, the detection data extracted from the read-out identification data is coincident with the generated detection data, the outputting of the data read out from the recording medium is permitted.

    摘要翻译： 一种用于再现记录介质的方法，包括从其上记录有数据和识别数据的记录介质读出识别数据，该识别数据包括实体标识数据和检测数据。 使用至少实体标识数据生成检测数据，并且指示实体标识数据至少是真实数据。 读出记录在记录介质上的识别信息，根据读出的识别数据的实体识别数据生成检测数据，并将从读出的识别数据中提取的检测数据与生成的检测数据进行比较。 作为比较的结果，当从读出的识别数据提取的检测数据与所生成的检测数据一致时，允许从记录介质读出的数据的输出。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20090215247A1

    公开(公告)日：2009-08-27

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    6.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照，防止铝腐蚀

    公开(公告)号：US07998793B2

    公开(公告)日：2011-08-16

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    7.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20080138962A1

    公开(公告)日：2008-06-12

    申请号：US11632993

    申请日：2004-07-22

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 通过照明装置（7a）和（7b）的晶片。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Containment vessel and nuclear power plant
    9.
    发明授权
    Containment vessel and nuclear power plant 有权

    公开(公告)号：US09818495B2

    公开(公告)日：2017-11-14

    申请号：US13988966

    申请日：2011-09-14

    申请人： Takashi Sato

    发明人： Takashi Sato

    IPC分类号： G21C13/10 ,  G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C15/18 ,  G21F9/02

    CPC分类号： G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C13/10 ,  G21C15/18 ,  G21F9/02 ,  Y02E30/40

    摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit
    10.
    发明授权
    Power supply circuit and apparatus including the circuit 有权

    公开(公告)号：US09653994B2

    公开(公告)日：2017-05-16

    申请号：US13215035

    申请日：2011-08-22

    申请人： Katsumi Taguchi ,  Takashi Sato

    发明人： Katsumi Taguchi ,  Takashi Sato

    IPC分类号： G01R31/00 ,  H02M3/158 ,  H02M1/36

    CPC分类号： H02M3/158 ,  H02M1/36

    摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.