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公开(公告)号：US07672187B2
公开(公告)日：2010-03-02
申请号：US11932967
申请日：2007-10-31
申请人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
发明人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： An elastic power header device and methods of operation are provided to improve both the read and the write margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin, write margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin and the write margin can be more conveniently controlled.
摘要翻译： 提供了一种弹性功率头装置和操作方法，通过提高读取稳定性，减少读取干扰并提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取和写入余量 。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量，写入余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量和写入裕度。
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公开(公告)号：US20080266995A1
公开(公告)日：2008-10-30
申请号：US11932643
申请日：2007-10-31
申请人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
发明人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： An approach to selectively powering a memory device is provided to improve the writeability of static random access memory (SRAM) cells without adversely compromising their stability. For example, various methods are provided to permit the voltage or current of a power supply line connected with one side of an SRAM cell to drop during write operations. This drop weakens one side of the SRAM cell and reduces the drive-fight between transistors of the SRAM cell and external write circuitry. As a result, the minimum voltage for writing new logic states into the SRAM cell is reduced to permit overall lower operating voltages for the SRAM cell and related circuitry. By continuing to maintain a second side of the SRAM cell at the reference voltage or current, the SRAM cell can successfully switch to a newly written logic state.
摘要翻译： 提供了选择性地为存储器件供电的方法以提高静态随机存取存储器（SRAM）单元的可写性，而不会不利地影响其稳定性。 例如，提供各种方法以允许在写入操作期间与SRAM单元的一侧连接的电源线的电压或电流下降。 该电压降弱了SRAM单元的一侧，并减少了SRAM单元的晶体管与外部写入电路之间的驱动。 结果，将新的逻辑状态写入SRAM单元的最小电压被降低以允许SRAM单元和相关电路的总体较低工作电压。 通过继续以参考电压或电流保持SRAM单元的第二面，SRAM单元可以成功切换到新写入的逻辑状态。
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公开(公告)号：US07869263B2
公开(公告)日：2011-01-11
申请号：US11938196
申请日：2007-11-09
申请人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
发明人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
IPC分类号： G11C11/00
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： An elastic power header device and methods of operation are provided to improve the read margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin can be more conveniently controlled.
摘要翻译： 提供了一种弹性功率头装置和操作方法，通过增加读取稳定性，减少读取干扰和提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取余量。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量。
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公开(公告)号：US20080186795A1
公开(公告)日：2008-08-07
申请号：US11938196
申请日：2007-11-09
申请人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
发明人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： An elastic power header device and methods of operation are provided to improve the read margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin can be more conveniently controlled.
摘要翻译： 提供了一种弹性功率头装置和操作方法，通过增加读取稳定性，减少读取干扰和提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取余量。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量。
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公开(公告)号：US20080186791A1
公开(公告)日：2008-08-07
申请号：US11932967
申请日：2007-10-31
申请人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
发明人： Yolin Lih , Ajay Bhatia , Dennis Wendell , Jun Liu , Daniel Fung , Shyam Balasubramanian
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： An elastic power header device and methods of operation are provided to improve both the read and the write margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin, write margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin and the write margin can be more conveniently controlled.
摘要翻译： 提供了一种弹性功率头装置和操作方法，通过提高读取稳定性，减少读取干扰并提高信噪比（SNM）品质因数，提高静态随机存取存储器（SRAM）单元的读取和写入余量 。 例如，弹性功率头装置的各种实现被用作可编程电阻以允许电源线达到最大电压。 允许电源线达到参考电压可以提高读取余量，写入余量和读取稳定性的灵活性。 此外，这种额外的灵活性可以通过调节电压的手段来控制。 该调整电压可以微调可编程电阻，从而可以更方便地控制读取余量和写入裕度。
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公开(公告)号：US07952910B2
公开(公告)日：2011-05-31
申请号：US11932555
申请日：2007-10-31
申请人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
发明人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
IPC分类号： G11C11/00
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： A memory device having a split power switch is provided to improve the writeability of static random access memory (SRAM) cells without adversely compromising their stability. For example, various split power switch circuits are used to permit the voltage or current of a power supply line connected with one side of an SRAM cell to drop during write operations. This drop weakens one side of the SRAM cell and reduces the drive-fight between transistors of the SRAM cell and external write circuitry. As a result, the minimum voltage for writing new logic states into the SRAM cell is reduced to permit overall lower operating voltages for the SRAM cell and related circuitry. By continuing to maintain a second side of the SRAM cell at the reference voltage or current, the SRAM cell can successfully switch to a newly written logic state.
摘要翻译： 提供具有分离电源开关的存储器件以提高静态随机存取存储器（SRAM）单元的可写性，而不会不利地影响其稳定性。 例如，各种分离电源开关电路用于允许在写操作期间与SRAM单元的一侧连接的电源线的电压或电流下降。 该电压降弱了SRAM单元的一侧，并减少了SRAM单元的晶体管与外部写入电路之间的驱动。 结果，将新的逻辑状态写入SRAM单元的最小电压被降低以允许SRAM单元和相关电路的总体较低工作电压。 通过继续以参考电压或电流保持SRAM单元的第二面，SRAM单元可以成功切换到新写入的逻辑状态。
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公开(公告)号：US20080273412A1
公开(公告)日：2008-11-06
申请号：US11932555
申请日：2007-10-31
申请人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
发明人： Yolin Lih , Dennis Wendell , Jun Liu , Daniel Fung , Ajay Bhatia , Shyam Balasubramanian
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/147 , G11C11/417
摘要： A memory device having a split power switch is provided to improve the writeability of static random access memory (SRAM) cells without adversely compromising their stability. For example, various split power switch circuits are used to permit the voltage or current of a power supply line connected with one side of an SRAM cell to drop during write operations. This drop weakens one side of the SRAM cell and reduces the drive-fight between transistors of the SRAM cell and external write circuitry. As a result, the minimum voltage for writing new logic states into the SRAM cell is reduced to permit overall lower operating voltages for the SRAM cell and related circuitry. By continuing to maintain a second side of the SRAM cell at the reference voltage or current, the SRAM cell can successfully switch to a newly written logic state.
摘要翻译： 提供具有分离电源开关的存储器件以提高静态随机存取存储器（SRAM）单元的可写性，而不会不利地影响其稳定性。 例如，各种分离电源开关电路用于允许在写操作期间与SRAM单元的一侧连接的电源线的电压或电流下降。 该电压降弱了SRAM单元的一侧，并减少了SRAM单元的晶体管与外部写入电路之间的驱动。 结果，将新的逻辑状态写入SRAM单元的最小电压被降低以允许SRAM单元和相关电路的总体较低工作电压。 通过继续以参考电压或电流保持SRAM单元的第二面，SRAM单元可以成功切换到新写入的逻辑状态。
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公开(公告)号：US10906934B2
公开(公告)日：2021-02-02
申请号：US14007610
申请日：2012-03-23
申请人： Arick Brown , Junyan Ji , Jun Liu , Yuchang John Wang
发明人： Arick Brown , Junyan Ji , Jun Liu , Yuchang John Wang
摘要： The invention provides methods of reducing fouling of ultrafiltration membranes in processes wherein virus particles are removed from aqueous solutions comprising virus particles and at least one protein by adding a surfactant or non-surfactant, non-ionic agent to the aqueous solution prior to filtration. The invention also provides methods to dissociate protein aggregates or to reduce the formation of protein aggregates by adding a surfactant or non-surfactant, non-ionic agent to the protein solution.
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公开(公告)号：US10673069B2
公开(公告)日：2020-06-02
申请号：US13532206
申请日：2012-06-25
申请人： Jun Liu , Jie Xiao , Cheng Huang
发明人： Jun Liu , Jie Xiao , Cheng Huang
摘要： Energy storage devices having hybrid anodes can address at least the problems of active material consumption and anode passivation that can be characteristic of traditional batteries. The energy storage devices each have a cathode separated from the hybrid anode by a separator. The hybrid anode includes a carbon electrode connected to a metal electrode, thereby resulting in an equipotential between the carbon and metal electrodes.
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公开(公告)号：US20160024587A1
公开(公告)日：2016-01-28
申请号：US14774212
申请日：2014-03-10
申请人： Jianwei CHE , Jennifer HARRIS , Hsin-I HSIEH , Jie LI , Jun LIU , Nicholas NG
发明人： Jianwei Che , Jennifer Harris , Hsin-I Hsieh , Jie Li , Jun Liu , Nicholas Ng
IPC分类号： C12Q1/68 , A61K31/497
摘要： The invention provides methods of monitoring differential gene expression of biomarkers to determine patient sensitivity to Wnt inhibitor, methods of determining the sensitivity of a cell to an Wnt inhibitor by measuring biomarkers, methods of screening for candidate Wnt inhibitor, Wnt inhibitor for use in head and neck squamous cell carcinoma.
摘要翻译： 本发明提供监测生物标志物的差异基因表达以确定患者对Wnt抑制剂的敏感性的方法，通过测量生物标志物来测定细胞对Wnt抑制剂的敏感性的方法，筛选候选Wnt抑制剂的方法，用于头部的Wnt抑制剂和 颈鳞状细胞癌。
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