公开(公告)号：US06753506B2

公开(公告)日：2004-06-22

申请号：US09938257

申请日：2001-08-23

申请人： Yong Liu ,  Jeffrey P. Hebb ,  William Francis Drislane

发明人： Yong Liu ,  Jeffrey P. Hebb ,  William Francis Drislane

IPC分类号： F27B514

CPC分类号： C23C16/45542 ,  C23C16/45544 ,  C23C16/4557 ,  C23C16/45591 ,  C23C16/46 ,  C30B25/14 ,  C30B31/16 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719

摘要： A method and apparatus for thermal processing of a workpiece reduces the time taken for a processing gas to be purged, or switched, during one or more processing steps for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.

摘要翻译： 在热处理系统的一个或多个处理步骤期间，用于工件的热处理的方法和装置减少了处理气体被清除或切换所花费的时间。 热处理系统包括根据本发明的一个示例性实施例的加热室。 围绕工件设置小体积的工件外壳。 平移机构，例如以定位组件的形式，支撑小体积工件外壳，用于在加热室内移动小体积工件外壳和工件。 小体积的工件外壳能够使用相对较少量的工艺（环境）气体，并减少这些气体的吹扫时间。 加热室可以具有用于热加工工件的热辐射强度梯度和温度梯度中的至少一个。 加热室可以具有围绕加热室设置的一个或多个加热元件。

公开(公告)号：US06375348B1

公开(公告)日：2002-04-23

申请号：US09711646

申请日：2000-11-13

申请人： Jeffrey P. Hebb ,  Ali Shajii

发明人： Jeffrey P. Hebb ,  Ali Shajii

IPC分类号： G01N2500

CPC分类号： H01L22/26 ,  G01J5/0003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.

摘要翻译： 一种用于在热处理装置的加热室中确定加工过程中工件的反射率的系统和方法。 该系统首先直接确定热处理装置的加热室外的工件的反射率，然后通过将非原位晶片的反射率与强度相关联来确定在热处理装置的加热室内的加工过程中工件的反射率 在加热室内从晶片反射的辐射。

公开(公告)号：US06610968B1

公开(公告)日：2003-08-26

申请号：US09670712

申请日：2000-09-27

申请人： Ali Shajii ,  Brian Matthews ,  Jeffrey P. Hebb ,  John Danis

发明人： Ali Shajii ,  Brian Matthews ,  Jeffrey P. Hebb ,  John Danis

IPC分类号： H05B102

CPC分类号： H01L21/67248 ,  C30B31/18 ,  H01L21/67109

摘要： A system and method for processing a workpiece in a thermal processing furnace by measuring the temperature of the workpiece in the thermal processing furnace, and based upon an intended temperature profile and the measured temperature of the workpiece, moving the workpiece through the furnace to heat process the workpiece generally according to the intended temperature profile.

摘要翻译： 一种用于通过在热处理炉中测量工件的温度并且基于预期温度分布和所测量的工件温度来处理热处理炉中的工件的系统和方法，将工件移动通过炉进行加热 工件一般根据预期的温度曲线。

公开(公告)号：US06461036B1

公开(公告)日：2002-10-08

申请号：US09413131

申请日：1999-10-06

申请人： Ali Shajii ,  Jeffrey P. Hebb

发明人： Ali Shajii ,  Jeffrey P. Hebb

IPC分类号： G01N2500

CPC分类号： H01L22/26 ,  G01J5/0003 ,  G01J5/041 ,  G01J5/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for determining the stray radiation within a heating chamber of a thermal processing apparatus. The stray radiation is determined by moving a generally unheated wafer vertically through the heating chamber, and measuring with a detector the amount of radiation reflected from the wafer at each vertical wafer position. The total measured radiation is then correlated with the stray radiation component of the total radiation.

摘要翻译： 一种用于确定热处理装置的加热室内的杂散辐射的系统和方法。 通过将通常不加热的晶片垂直移动通过​​加热室来确定杂散辐射，并且用检测器测量在每个垂直晶片位置处从晶片反射的辐射量。 然后将总测量的辐射与总辐射的杂散辐射分量相关。

公开(公告)号：US06183127B2

公开(公告)日：2001-02-06

申请号：US09280308

申请日：1999-03-29

申请人： Jeffrey P. Hebb ,  Ali Shajii

发明人： Jeffrey P. Hebb ,  Ali Shajii

IPC分类号： G01N2500

CPC分类号： H01L22/26 ,  G01J5/0003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.

摘要翻译： 一种用于在热处理装置的加热室中确定加工过程中工件的反射率的系统和方法。 该系统首先直接确定热处理装置的加热室外的工件的反射率，然后通过将非原位晶片的反射率与强度相关联来确定在热处理装置的加热室内的加工过程中工件的反射率 在加热室内从晶片反射的辐射。