公开(公告)号：US20090211903A1

公开(公告)日：2009-08-27

申请号：US12392457

申请日：2009-02-25

申请人： Yoon-Gyu LEE ,  Jin-Ho LEE ,  Yil-Hwan YOU ,  Ju-Ok PARK

发明人： Yoon-Gyu LEE ,  Jin-Ho LEE ,  Yil-Hwan YOU ,  Ju-Ok PARK

IPC分类号： C23C14/00 ,  B29C43/02

CPC分类号： C23C14/3414 ,  C23C14/08

摘要： Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO2)x(In2O3)y(ZnO)z, in which x:y is about 1:0.01 to 1:1, y:z is about 1:0.1 to 1:10, and M is at least one metal selected from a group consisting of hafnium (Hf), zirconium (Zr), and titanium (Ti).

摘要翻译： 公开了一种铟（In）锌（Zn）氧化物基溅射靶，其制造方法和使用In Zn氧化物基溅射靶沉积的In-Zn氧化物基薄膜。 In Zn氧化物基溅射靶具有（MO 2）x（In 2 O 3）y（ZnO）z的组成，其中x：y为约1:0.01至1:1，y：z为约1:0.1至1:1。 10，M是选自铪（Hf），锆（Zr）和钛（Ti）中的至少一种金属。