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    ZINC OXIDE-BASED CONDUCTOR
    1.
    发明申请
    ZINC OXIDE-BASED CONDUCTOR 有权
    基于氧化锌的导电体

    公开(公告)号：US20110001095A1

    公开(公告)日：2011-01-06

    申请号：US12824922

    申请日：2010-06-28

    申请人： Tae Hwan Yu ,  Yoon Gyu Lee ,  Yil Hwan You ,  Sang Cheol Jung

    发明人： Tae Hwan Yu ,  Yoon Gyu Lee ,  Yil Hwan You ,  Sang Cheol Jung

    IPC分类号： H01B1/02

    CPC分类号： H01B1/08 ,  G02F1/13439 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

    摘要： A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

    摘要翻译： 基于氧化锌的导体包括与镓和锰共掺的ZnO。 优选地，镓的掺杂浓度范围为0.01at％至10at％，锰的掺杂浓度范围为0.01at％至5at％。 更优选地，镓的掺杂浓度范围为2at％至8at％，锰的掺杂浓度范围为0.1at％至2at％。 更优选地，镓的掺杂浓度范围为4at％至6at％，锰的掺杂浓度范围为0.2at％至1.5at％。 氧化锌系导体是用作太阳能电池或液晶显示器的电极的透明导体。

    Zinc oxide-based conductor
    2.
    发明授权
    Zinc oxide-based conductor 有权
    氧化锌基导体

    公开(公告)号：US08241531B2

    公开(公告)日：2012-08-14

    申请号：US12824922

    申请日：2010-06-28

    申请人： Tae Hwan Yu ,  Yoon Gyu Lee ,  Yil Hwan You ,  Sang Cheol Jung

    发明人： Tae Hwan Yu ,  Yoon Gyu Lee ,  Yil Hwan You ,  Sang Cheol Jung

    IPC分类号： H01B1/08 ,  H01L35/14

    CPC分类号： H01B1/08 ,  G02F1/13439 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

    摘要： A zinc oxide-based conductor includes ZnO co-doped with gallium and manganese. Preferably, the doping concentration of the gallium ranges from 0.01 at % to 10 at % and the doping concentration of the manganese ranges from 0.01 at % to 5 at %. More preferably, the doping concentration of the gallium ranges from 2 at % to 8 at % and the doping concentration of the manganese ranges from 0.1 at % to 2 at %. Still more preferably, the doping concentration of the gallium ranges from 4 at % to 6 at % and the doping concentration of the manganese ranges from 0.2 at % to 1.5 at %. The zinc oxide-based conductor is a transparent conductor that is used as an electrode of a solar cell or a liquid crystal display.

    摘要翻译： 基于氧化锌的导体包括与镓和锰共掺的ZnO。 优选地，镓的掺杂浓度范围为0.01at％至10at％，锰的掺杂浓度范围为0.01at％至5at％。 更优选地，镓的掺杂浓度范围为2at％至8at％，锰的掺杂浓度范围为0.1at％至2at％。 更优选地，镓的掺杂浓度范围为4at％至6at％，锰的掺杂浓度范围为0.2at％至1.5at％。 氧化锌系导体是用作太阳能电池或液晶显示器的电极的透明导体。

    INDIUM ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND INDIUM ZINC OXIDE BASED THIN FILM
    5.
    发明申请
    INDIUM ZINC OXIDE BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND INDIUM ZINC OXIDE BASED THIN FILM 审中-公开
    基于氧化锌的氧化铟基溅射靶，其制造方法和基于氧化锌的薄膜

    公开(公告)号：US20090211903A1

    公开(公告)日：2009-08-27

    申请号：US12392457

    申请日：2009-02-25

    申请人： Yoon-Gyu LEE ,  Jin-Ho LEE ,  Yil-Hwan YOU ,  Ju-Ok PARK

    发明人： Yoon-Gyu LEE ,  Jin-Ho LEE ,  Yil-Hwan YOU ,  Ju-Ok PARK

    IPC分类号： C23C14/00 ,  B29C43/02

    CPC分类号： C23C14/3414 ,  C23C14/08

    摘要： Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO2)x(In2O3)y(ZnO)z, in which x:y is about 1:0.01 to 1:1, y:z is about 1:0.1 to 1:10, and M is at least one metal selected from a group consisting of hafnium (Hf), zirconium (Zr), and titanium (Ti).

    摘要翻译： 公开了一种铟（In）锌（Zn）氧化物基溅射靶，其制造方法和使用In Zn氧化物基溅射靶沉积的In-Zn氧化物基薄膜。 In Zn氧化物基溅射靶具有（MO 2）x（In 2 O 3）y（ZnO）z的组成，其中x：y为约1:0.01至1:1，y：z为约1:0.1至1:1。 10，M是选自铪（Hf），锆（Zr）和钛（Ti）中的至少一种金属。