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公开(公告)号：US08860189B2
公开(公告)日：2014-10-14
申请号：US13520357
申请日：2010-02-17
IPC分类号： H01L29/66 , H01L29/06 , H01L29/868
CPC分类号： H01L29/868 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/6609
摘要： Provided is a PIN diode that can suppress thermal destruction from occurring at the time of a reverse bias exceeding a breakdown voltage by current concentration on a curved part of an anode region. The PIN diode is configured to have: a semiconductor substrate 11 that includes an N+ semiconductor layer 1 and an N− semiconductor layer 2; a cathode electrode 18 that is formed on an outer surface of the N+ semiconductor layer 1; a main anode region 16, a separated anode region 15, and an anode connecting region that are formed by selectively diffusing P-type impurities from an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is formed on the main anode region 16.
摘要翻译： 提供一种PIN二极管，其可以抑制在阳极区域的弯曲部分上的电流集中在超过击穿电压的反向偏压时发生热破坏。 PIN二极管被配置为具有：包括N +半导体层1和N半导体层2的半导体衬底11; 形成在N +半导体层1的外表面上的阴极18; 通过从N半导体层2的外表面选择性地扩散P型杂质而形成的主阳极区域16，分隔阳极区域15和阳极连接区域; 以及形成在主阳极区域16上的阳极电极17。
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公开(公告)号：US20120299164A1
公开(公告)日：2012-11-29
申请号：US13520361
申请日：2010-02-16
IPC分类号： H01L29/868
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0638
摘要： A PIN diode having improved avalanche resistance is provided. The PIN diode includes: a semiconductor substrate 11 that includes an N+ semiconductor layer 1, and an N− semiconductor layer 2; a P-type anode region 15 that is formed by selective impurity diffusion into an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is conducted to the anode region 15 through a contact region 17c in the anode region 15. The anode region 15 has a substantially rectangular outer edge of which four sides are adapted to be linear parts B2 and four vertices are adapted to be curved parts B1, and outside the contact region 17c, N-type non-diffusion corner regions 16 that extend along the curved parts B1 are respectively formed.
摘要翻译： 提供了具有改善的雪崩阻力的PIN二极管。 PIN二极管包括：包括N +半导体层1和N半导体层2的半导体衬底11; 通过选择性杂质扩散到N半导体层2的外表面中形成的P型阳极区域15; 以及通过阳极区域15中的接触区域17c而导引到阳极区域15的阳极电极17.阳极区域15具有基本上矩形的外边缘，其四条边适于线性部分B2，并且四个顶点被适配 作为弯曲部分B1，并且在接触区域17c的外部，分别形成沿着弯曲部分B1延伸的N型非扩散角区域16。
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公开(公告)号：US08564105B2
公开(公告)日：2013-10-22
申请号：US13520361
申请日：2010-02-16
IPC分类号： H01L31/075 , H01L31/105 , H01L31/117
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0638
摘要： A PIN diode having improved avalanche resistance is provided. The PIN diode includes: a semiconductor substrate 11 that includes an N+ semiconductor layer 1, and an N− semiconductor layer 2; a P-type anode region 15 that is formed by selective impurity diffusion into an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is conducted to the anode region 15 through a contact region 17c in the anode region 15. The anode region 15 has a substantially rectangular outer edge of which four sides are adapted to be linear parts B2 and four vertices are adapted to be curved parts B1, and outside the contact region 17c, N-type non-diffusion corner regions 16 that extend along the curved parts B1 are respectively formed.
摘要翻译： 提供了具有改善的雪崩阻力的PIN二极管。 PIN二极管包括：包括N +半导体层1和N半导体层2的半导体衬底11; 通过选择性杂质扩散到N半导体层2的外表面中形成的P型阳极区域15; 以及通过阳极区域15中的接触区域17c而导引到阳极区域15的阳极电极17.阳极区域15具有基本上矩形的外边缘，其四条边适于线性部分B2，并且四个顶点被适配 作为弯曲部分B1，并且在接触区域17c的外部，分别形成沿着弯曲部分B1延伸的N型非扩散角区域16。
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公开(公告)号：US20120299163A1
公开(公告)日：2012-11-29
申请号：US13520357
申请日：2010-02-17
IPC分类号： H01L29/868
CPC分类号： H01L29/868 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/6609
摘要： Provided is a PIN diode that can suppress thermal destruction from occurring at the time of a reverse bias exceeding a breakdown voltage by current concentration on a curved part of an anode region. The PIN diode is configured to have: a semiconductor substrate 11 that includes an N+ semiconductor layer 1 and an N− semiconductor layer 2; a cathode electrode 18 that is formed on an outer surface of the N+ semiconductor layer 1; a main anode region 16, a separated anode region 15, and an anode connecting region that are formed by selectively diffusing P-type impurities from an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is formed on the main anode region 16.
摘要翻译： 提供一种PIN二极管，其可以抑制在阳极区域的弯曲部分上的电流集中在超过击穿电压的反向偏压时发生热破坏。 PIN二极管被配置为具有：包括N +半导体层1和N半导体层2的半导体衬底11; 形成在N +半导体层1的外表面上的阴极18; 通过从N半导体层2的外表面选择性地扩散P型杂质而形成的主阳极区域16，分隔阳极区域15和阳极连接区域; 以及形成在主阳极区域16上的阳极电极17。
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