公开(公告)号：US20110244610A1

公开(公告)日：2011-10-06

申请号：US13074714

申请日：2011-03-29

申请人： Yoshiki SAITO ,  Koji Okuno ,  Yasuhisa Ushida

发明人： Yoshiki SAITO ,  Koji Okuno ,  Yasuhisa Ushida

IPC分类号： H01L33/22

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/0079

摘要： The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits.

摘要翻译： 本发明提供一种主要表面是提供内部电场为零的平面的III族氮化物半导体发光器件的制造方法，其表现出提高的光提取性能。 在制造方法中，对a面蓝宝石基板的一个表面进行干蚀刻，从而形成具有从上方观察而成蜂窝状图案的多个台面的压花图案; 以及由具有m面主表面的III族氮化物半导体层形成的n型层，发光层和p型层依次层叠在蓝宝石基板的表面上 在其上形成台面。 接着，在p型层上形成p电极，p电极通过金属层与支撑基板接合。 接下来，通过激光剥离处理去除蓝宝石衬底。 在这样暴露的n型层的表面上形成具有通过蓝宝石衬底的压花图案的台面的转印提供的凹痕的压花图案。 然后，对n型层的压花图案表面进行湿式蚀刻，从而形成许多蚀刻凹坑。