摘要:
An image pickup apparatus has an image pickup device including an imaging section, in which signal charges read out from plural photosensitive cells are vertically transferred over vertical transfer paths and the transferred signal charges are in turn horizontally transferred over a horizontal transfer path, which has a branching section for assigning the transferred signal charges to plural output channels, i.e. plural horizontal transfer paths provided at the end of the horizontal transfer path. A temperature sensor for detecting the temperature of the image pickup device is provided on the imaging section, and a temperature-induced drift compensator corrects a transfer error of signal charges in the image pickup device. The compensator modifies transfer error correction based on the detected temperature. The image pickup apparatus can thus substantially reduce an assignment error even when the temperature of the image pickup device changes.
摘要:
An image pickup apparatus has an image pickup device including an imaging section, in which signal charges read out from plural photosensitive cells are vertically transferred over vertical transfer paths and the transferred signal charges are in turn horizontally transferred over a horizontal transfer path, which has a branching section for assigning the transferred signal charges to plural output channels, i.e. plural horizontal transfer paths provided at the end of the horizontal transfer path. A temperature sensor for detecting the temperature of the image pickup device is provided on the imaging section, and a temperature-induced drift compensator corrects a transfer error of signal charges in the image pickup device. The compensator modifies transfer error correction based on the detected temperature. The image pickup apparatus can thus substantially reduce an assignment error even when the temperature of the image pickup device changes.
摘要:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.
摘要:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.
摘要:
A CCD solid-state imaging device is provided and includes: a semiconductor substrate; a plurality of photodiodes arranged in a two-dimensional array; a plurality of vertical charge transfer paths, each reading a signal charge from the photo diodes, wherein electron multiplication of the signal charge is performed in each of the vertical transfer paths; and a storage section that stores data indicating a multiplication factor of the electron multiplication, the multiplication factor being detected at each place of the vertical transfer paths in which the electron multiplication is performed.
摘要:
In a solid state imaging device, signal charges are branched to be output to in the form of one or plural outputs. At a horizontal transfer speed not lower than a predetermined transfer speed, the imaging device transfers signal charges of color attributes classified by a branching section, to plural horizontal transfer paths, where the signal charges are converted into analog voltage signals, which will be output synchronously. At a horizontal transfer speed lower than the predetermined transfer speed, the analog voltage signal converted is output from, e.g. the horizontal transfer path which has been selected. Output amplifiers arranged on the horizontal transfer paths are differentiated in sensitivities in detecting signal charges, depending on color attributes of signal charges supplied, and output the analog voltage signals.
摘要:
In a solid state imaging device, signal charges are branched to be output to in the form of one or plural outputs. At a horizontal transfer speed not lower than a predetermined transfer speed, the imaging device transfers signal charges of color attributes classified by a branching section, to plural horizontal transfer paths, where the signal charges are converted into analog voltage signals, which will be output synchronously. At a horizontal transfer speed lower than the predetermined transfer speed, the analog voltage signal converted is output from, e.g. the horizontal transfer path which has been selected. Output amplifiers arranged on the horizontal transfer paths are differentiated in sensitivities in detecting signal charges, depending on color attributes of signal charges supplied, and output the analog voltage signals.
摘要:
After an end of exposure, a data level of OB signals that are imaging signals output from OB portion 400 are sampled by a CDS circuit 6 twice, to artificially generate two OB signals from each OB signal. Thereby, assuming that the total number of OB signals required to stabilize the black level in the clamp circuit 9 is n, the black level can be stabilized before it is started to output effective signals that are imaging signals from effective pixel portion 200 even if the number of OB signals output from the OB portion 400 is 1/n (in the case where pixel mixing or pixel thinning is performed, or in the case where the number of photoelectric conversion elements in the OB portion 400 is less than n). Accordingly, it is possible to prevent the image degradation by suppressing a wrong black level.
摘要:
An imaging apparatus which enables correction of signal deterioration responsible for transfer deterioration occurred in a horizontal charge transfer path is provided. Provided that positions of “n” transfer packet formed in a horizontal charge transfer path in correspondence to “n” vertical charge transfer paths are expressed as a coordinate “i” (i=1, 2, 3, . . . n), a solid-state imaging device is exposed under exposure conditions, and reference charges generated in photoelectric conversion elements upon the exposure are accumulated in transfer packets located at odd coordinates. The charge accumulation packets accumulating the reference charges and other empty packets are transferred horizontally, whereby a reference signal responsive to the reference charge and an untransferred signal responsive to a charge in the empty packet are output. The thus-output signals are stored in memory. Deterioration of an imaging signal S(i) responsive to the charge accumulated in the transfer packet located at the coordinate “i” in a photographing mode during exposure is compensated for in accordance with the data stored in the memory and the imaging signal S(i).
摘要:
After an end of exposure, a data level of OB signals that are imaging signals output from OB portion 400 are sampled by a CDS circuit 6 twice, to artificially generate two OB signals from each OB signal. Thereby, assuming that the total number of OB signals required to stabilize the black level in the clamp circuit 9 is n, the black level can be stabilized before it is started to output effective signals that are imaging signals from effective pixel portion 200 even if the number of OB signals output from the OB portion 400 is 1/n (in the case where pixel mixing or pixel thinning is performed, or in the case where the number of photoelectric conversion elements in the OB portion 400 is less than n). Accordingly, it is possible to prevent the image degradation by suppressing a wrong black level.