摘要:
An image pickup apparatus has an image pickup device including an imaging section, in which signal charges read out from plural photosensitive cells are vertically transferred over vertical transfer paths and the transferred signal charges are in turn horizontally transferred over a horizontal transfer path, which has a branching section for assigning the transferred signal charges to plural output channels, i.e. plural horizontal transfer paths provided at the end of the horizontal transfer path. A temperature sensor for detecting the temperature of the image pickup device is provided on the imaging section, and a temperature-induced drift compensator corrects a transfer error of signal charges in the image pickup device. The compensator modifies transfer error correction based on the detected temperature. The image pickup apparatus can thus substantially reduce an assignment error even when the temperature of the image pickup device changes.
摘要:
An image pickup apparatus has an image pickup device including an imaging section, in which signal charges read out from plural photosensitive cells are vertically transferred over vertical transfer paths and the transferred signal charges are in turn horizontally transferred over a horizontal transfer path, which has a branching section for assigning the transferred signal charges to plural output channels, i.e. plural horizontal transfer paths provided at the end of the horizontal transfer path. A temperature sensor for detecting the temperature of the image pickup device is provided on the imaging section, and a temperature-induced drift compensator corrects a transfer error of signal charges in the image pickup device. The compensator modifies transfer error correction based on the detected temperature. The image pickup apparatus can thus substantially reduce an assignment error even when the temperature of the image pickup device changes.
摘要:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.
摘要:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.
摘要:
A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.
摘要:
A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.
摘要:
A digital camera is provided that includes an image pick-up subsection whose CCD includes a shaded sub-pixel, and a signal processor that includes a dark processor and a sub-signal processor. The digital camera acquires a dark current in an effective pixel area and a leak signal or leak data during reading out signal charges to correct images.
摘要:
An imaging apparatus includes a solid-state imaging device which is provided with plural pixels arranged in two-dimensional array form on a photodetecting surface of a semiconductor substrate, pixels on even-numbered rows are shifted from pixels on odd-numbered rows by a half pixel pitch, color-filters are Bayer-arranged over the respective pixels of the odd-numbered rows, and color-filters are Bayer-arranged over the respective pixels of the even-numbered rows; and an imaging device driving section for reading shot image signals of the pixels of the odd-numbered rows and shot image signals of the pixels of the even-numbered rows divisionally in separate frames. A color contamination correction is performed on a shot image signal of a pixel of attention using shot image signals of plural pixels around the pixel of attention among shot image signals, read out divisionally, of the pixels of one of the odd-numbered rows.
摘要:
An imaging apparatus includes a solid-state imaging device which is provided with plural pixels arranged in two-dimensional array form on a photodetecting surface of a semiconductor substrate, pixels on even-numbered rows are shifted from pixels on odd-numbered rows by a half pixel pitch, color-filters are Bayer-arranged over the respective pixels of the odd-numbered rows, and color-filters are Bayer-arranged over the respective pixels of the even-numbered rows; and an imaging device driving section for reading shot image signals of the pixels of the odd-numbered rows and shot image signals of the pixels of the even-numbered rows divisionally in separate frames. A color contamination correction is performed on a shot image signal of a pixel of attention using shot image signals of plural pixels around the pixel of attention among shot image signals, read out divisionally, of the pixels of one of the odd-numbered rows.
摘要:
In a method for correcting a picked-up image signal of an image pickup apparatus including: a solid-state imaging device comprising a plurality of pixels which are arranged in a two-dimensional array form in a surface portion of a semiconductor substrate, and an amplifier which is provided at the semiconductor substrate, and which amplifies signals that are detected by the pixels in accordance with an amount of incident light; and an image signal processing section which processes a signal output from the amplifier, each of the pixels senses light emission produced when the amplifier operates, through the semiconductor substrate to obtain a signal amount as a correction amount, and the correction amount is subtracted from a detection signal amount of the pixel which is output from the amplifier, to correct the detection amount.