公开(公告)号：US4367200A

公开(公告)日：1983-01-04

申请号：US227682

申请日：1981-01-23

申请人： Yoshinori Mimura ,  Yoshihisa Komazawa ,  Yasuyuki Okamura

发明人： Yoshinori Mimura ,  Yoshihisa Komazawa ,  Yasuyuki Okamura

IPC分类号： C30B15/08 ,  C30B15/02 ,  C30B35/00

CPC分类号： C30B15/08 ,  Y10S117/91 ,  Y10T117/102 ,  Y10T117/1036 ,  Y10T117/1044

摘要： A single crystal manufacturing device, in which there are provided a crucible having a melting part for holding a molten liquid of a raw material and a nozzle part for continuously taking out a predetermined amount of the molten liquid by the action of gravity; a heater for heating the raw material to melt it in the melting part; and temperature control means for heating the nozzle part to take out the molten liquid of the raw material from the nozzle part and for providing as large a thermal gradient as possible in the solid-liquid interface between the molten liquid taken out from the nozzle part and a grown single crystal continuous to the molten liquid.The crucible can be double-structured. A guide pipe filled with fibrous material may be provided between the nozzle and the rollers of the grown single crystal.

摘要翻译： 一种单晶体制造装置，其中设置有具有用于保持原料的熔融液体的熔融部分和用于通过重力的作用连续取出预定量的熔融液体的喷嘴部分的坩埚; 用于加热原料以在熔化部分熔化的加热器; 以及温度控制装置，用于加热喷嘴部分以从喷嘴部分取出原料的熔融液体，并且在从喷嘴部分取出的熔融液体与从喷嘴部分取出的熔融液体之间的固 - 液界面中提供尽可能大的热梯度， 与熔融液体连续生长的单晶。 坩埚可以是双重结构的。 填充有纤维材料的引导管可以设置在喷嘴和生长的单晶的辊之间。