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    Method and device for producing material having a monocrystalline or multicrystalline structure
    1.
    发明授权
    Method and device for producing material having a monocrystalline or multicrystalline structure 有权
    用于生产具有单晶或多晶结构的材料的方法和装置

    公开(公告)号：US08956454B2

    公开(公告)日：2015-02-17

    申请号：US14110478

    申请日：2012-03-21

    Applicant: Rupert Köckeis

    Inventor： Rupert Köckeis

    IPC: C30B15/02 ,  C30B15/14 ,  C30B15/08 ,  C30B28/10

    CPC classification number: C30B15/14 ,  C30B15/08 ,  C30B28/10 ,  Y10S117/91 ,  Y10T117/1004 ,  Y10T117/1068

    Abstract: According to the invention, a device and a method for producing materials having a monocrystalline or multicrystalline structure are provided, in which a container is arranged between two pressure regions and the setting of the height of the melt in the container takes place via the setting of the differential pressure between the pressure regions. As a result, even particulate material can be fed continuously to the container and melted uniformly. Delivery material with high purity can also be pulled out of the container.

    Abstract translation: 根据本发明，提供了一种用于生产具有单晶或多晶体结构的材料的装置和方法，其中容器布置在两个压力区域之间，并且容器中熔体的高度的设定通过设置 压力区域之间的压差。 结果，即使颗粒材料可以连续地供给到容器中并且均匀地熔化。 高纯度的输送材料也可以从容器中拉出。

    Ion exchange waveguides and methods fabrication
    2.
    发明申请
    Ion exchange waveguides and methods fabrication 失效
    离子交换波导和方法制造

    公开(公告)号：US20050115491A1

    公开(公告)日：2005-06-02

    申请号：US10919695

    申请日：2004-08-16

    Applicant: Lee Burrows

    Inventor： Lee Burrows

    IPC: C30B15/00 ,  C30B33/00 ,  G02B6/12 ,  G02B6/134 ,  G02F1/035 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02 ,  G02B6/10

    CPC classification number: G02F1/035 ,  C30B15/00 ,  C30B29/30 ,  C30B33/00 ,  G02B6/1345 ,  G02B2006/12169 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/20 ,  Y10S117/91

    Abstract: A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.

    Abstract translation: 用于制造离子交换波导的方法，如光调制器和其它光波导器件中的铌酸锂或钽酸锂波导，利用加压退火来进一步扩散和限制离子的交换，并且包括使晶体衬底与离子源离子交换， 通过将含有铌酸锂或钽酸锂衬底的气体气氛加压到正常大气压下来对衬底进行退火，将衬底加热至约150摄氏度至约1000摄氏度的温度，保持压力和温度以实现更大的离子扩散和限制 交换，并以适当的降速率将结构冷却至环境温度。 在本发明的另一方面，将与结晶基底相同的化学组成的粉末引入退火处理室中，以在退火期间限制结晶底物从脱气碱土金属氧化物。 在本发明的另一方面，提供一种退火容器，其允许结晶基材在粉末存在下进行退火，而不会在退火过程中用粉末污染基材。 根据该方法制造的波导显示出优异的漂移性能。

    Wafer produced thereby, and associated methods and devices using the wafer
    3.
    发明申请
    Wafer produced thereby, and associated methods and devices using the wafer 失效
    由此制造的晶片，以及使用晶片的相关方法和装置

    公开(公告)号：US20030024472A1

    公开(公告)日：2003-02-06

    申请号：US09920448

    申请日：2001-08-01

    Applicant: CRYSTAL PHOTONICS, INCORPORATED

    Inventor： Herbert Paul Maruska ,  John Joseph Gallagher ,  Mitch M.C. Chou

    IPC: C30B028/12 ,  C30B023/00 ,  C30B028/14 ,  C30B025/00

    CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  Y10S117/91

    Abstract: A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cmnull2.

    Abstract translation: 制造独立的单晶氮化镓（GaN）晶片的方法包括：使用卤化镓反应气体直接在单晶LiAlO 2衬底上形成单晶GaN层，并从单晶中除去单晶LiAlO 2衬底 GaN层制作独立的单晶GaN晶圆。 形成单晶GaN层可以包括使用卤化镓反应气体和含氮反应气体通过气相外延（VPE）沉积GaN。 由于卤化镓用作反应气体而不是诸如三甲基镓（TMG）的金属有机反应物，所以可以使用提供商业上可接受的快速生长速率的VPE进行GaN层的生长。 另外，GaN层整体也没有碳。 由于所制造的GaN层是高质量的单晶，因此可能具有小于约107cm -2的缺陷密度。

    Modified crucible for the pendant drop method of crystallization
    5.
    发明授权
    Modified crucible for the pendant drop method of crystallization 失效
    改性坩埚用于悬滴法结晶

    公开(公告)号：US4495155A

    公开(公告)日：1985-01-22

    申请号：US496893

    申请日：1983-05-23

    Applicant: Jean Ricard ,  Charles Excoffon

    Inventor： Jean Ricard ,  Charles Excoffon

    IPC: C30B15/00 ,  C30B15/08 ,  C30B15/10 ,  C30B15/24 ,  C30B29/64

    CPC classification number: C30B15/08 ,  C30B15/007 ,  C30B15/10 ,  Y10S117/91 ,  Y10T117/1052

    Abstract: A crucible useful for continuous preparation of single crystals with selected crystal orientation or for depositing thin films of crystalline materials such as silica on substrates such as graphite by the pendant drop growth (PDG) method, the crucible base being tapped with one or more capillary bores having a length equal to or greater than the retention height of the molten liquid used to prepare the crystal of film at the temperatures and pressures used, the crucible being improved by "capping" its bottom with a conical baffle plate supported by feet on the bottom of the crucible, the improved crucible providing single crystals having high dimensional regularity and containing no bubbles or unmelted inclusions and the single crystals being broadly useful in jewelry, horology, and electronics.

    Abstract translation: 一种用于连续制备具有选定晶体取向的单晶或用于通过侧滴生长（PDG）方法在诸如石墨的基底上沉积诸如二氧化硅的结晶材料的薄膜的坩埚，坩埚基底与一个或多个毛细管孔 其长度等于或大于在所用温度和压力下用于制备膜晶体的熔融液体的保持高度，坩埚的顶部由顶部支撑的圆锥形挡板进行“封盖” 的坩埚，提供具有高尺寸规则性并且不含气泡或未熔化夹杂物的单晶的改进的坩埚，并且单晶可广泛用于珠宝，钟表和电子。

    Apparatus and process for cooling and solidifying continuous or semi-continuously cast material
    6.
    发明授权
    Apparatus and process for cooling and solidifying continuous or semi-continuously cast material 失效
    用于冷却和固化连续或半连续铸造材料的装置和方法

    公开(公告)号：US4434838A

    公开(公告)日：1984-03-06

    申请号：US272132

    申请日：1981-06-10

    Applicant: Peter E. Sevier

    Inventor： Peter E. Sevier

    IPC: B22D11/124

    CPC classification number: B22D11/1241 ,  B22D11/124 ,  Y10S117/91

    Abstract: An apparatus and process for casting a material comprising a coolant application device comprising a fluidized bed coolant system. The casting is carried out utilizing a casting mold which defines a casting zone. A soundwave generating system is provided for enhancing the flow of the fluidized bed into the vicinity of the casting zone.

    Abstract translation: 一种铸造材料的装置和方法，包括包括流化床冷却剂系统的冷却剂施加装置。 使用限定铸造区域的铸模来进行铸造。 提供了一种用于增强流化床流入铸造区域附近的声波产生系统。

    Method of crucible-free zone melting a crystalline rod with laterally displaced rod holders
    8.
    发明授权
    Method of crucible-free zone melting a crystalline rod with laterally displaced rod holders 失效
    无区域熔融方法具有侧向位移夹持器的晶体管

    公开(公告)号：US3594132A

    公开(公告)日：1971-07-20

    申请号：US3594132D

    申请日：1967-02-27

    Applicant: SIEMENS AG

    Inventor： KELLER WOLFGANG

    IPC: C30B13/28 ,  B01J17/10

    CPC classification number: C30B13/28 ,  Y10S117/91 ,  Y10S117/912 ,  Y10T117/1072

    Abstract: METHOD OF CRUCIBLE-FREE ZONE MELTING A CRYSTALLINE ROD WHICH COMPRISES ROTATING A PAIR OF SPACED AND SUBSTANTIALLY VERTICALLY ALIGNED END HOLDERS SUPPORTING A CRYSTALLINE ROD THEREBETWEEN, HEATING THE ROD WITH AN ANNULAR HEATING DEVICE SURROUNDING THE ROD TO A TEMPERATURE AT WHICH A MOLTEN ZONE IS FORMED IN THE ROD DIVIDING THE ROD INTO A SUPPLY ROD PORITION BEING SUPPLIED TO THE MELT IN THE MOLTEN ZONE AND A ROD PORTION RESOLIDIFYING FROM THE MELT, RELATIVELY DISPLACING THE END HOLDERS AND THE HEATING DEVICE IN THE DIRECTION OF THE ROD AXIS AT A GIVEN RELATIVE SPEED SO THAT THE RESOLIDIFYING ROD PORTION HAS A THICKNESS OF PREDETERMINED NOMINAL VALUE, AND LATERALLY DISPLACING THE END HOLDER FOR THE SUPPLY ROD PORTION OUT OF VERTICAL ALIGNMENT WITH THE OTHER END HOLDER.

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