公开(公告)号：US07807545B2

公开(公告)日：2010-10-05

申请号：US11670636

申请日：2007-02-02

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/76 ,  H01L21/265 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76243

摘要： A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300° C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

摘要翻译： 获得具有薄膜厚度的BOX层的SIMOX晶片，而不会降低生产率或质量劣化。 一种用于制造SIMOX晶片的方法，包括：在硅晶片中形成第一离子注入层的步骤; 形成处于非晶态的第二离子注入层的步骤; 以及将晶片保持在含氧气氛中的不低于1300℃但小于硅熔点6〜36小时的高温热处理步骤，以改变第一和第二离子交换树脂， 将注入层置于BOX层中，在高温热处理的升温过程中将含有不少于0.1体积％但小于1.0体积％的氯的气体混入大气中。

公开(公告)号：US20090152671A1

公开(公告)日：2009-06-18

申请号：US12389299

申请日：2009-02-19

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less.

摘要翻译： 该制造SIMOX晶片的方法包括：将硅晶片加热至300℃以上并注入氧离子以在硅晶片内形成高氧浓度层; 使硅晶片冷却至小于300℃，并注入氧离子以形成非晶层; 并在含氧的混合气体气氛中对硅晶片进行热处理，以形成掩埋氧化物层。 在掩埋氧化物层的形成中，起始温度低于1350℃，最高温度为1350℃以上。 该SIMOX晶片通过上述方法制造，并且在BOX层上包括BOX层和SOI层。 BOX层的厚度为1300以上，击穿电压为7MV / cm以上，SOI层的表面和SOI层与BOX层之间的界面的平均粗糙度为10μm 面积为4Årms以下。

公开(公告)号：US20060281233A1

公开(公告)日：2006-12-14

申请号：US11450562

申请日：2006-06-08

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/84

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less.

公开(公告)号：US07514343B2

公开(公告)日：2009-04-07

申请号：US11450562

申请日：2006-06-08

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/425

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 Å or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-μm square area of 4 Å rms or less.

摘要翻译： 该制造SIMOX晶片的方法包括：将硅晶片加热至300℃以上并注入氧离子以在硅晶片内形成高氧浓度层; 使硅晶片冷却至小于300℃，并注入氧离子以形成非晶层; 并在含氧气的混合气体气氛中对硅晶片进行热处理，以形成掩埋氧化物层。 在掩埋氧化物层的形成中，起始温度低于1350℃，最高温度为1350℃以上。 该SIMOX晶片通过上述方法制造，并且在BOX层上包括BOX层和SOI层。 BOX层的厚度为1300以上，击穿电压为7MV / cm以上，SOI层的表面和SOI层与BOX层之间的界面的平均粗糙度为10μm 面积为4Årms以下。

公开(公告)号：US20070178680A1

公开(公告)日：2007-08-02

申请号：US11670636

申请日：2007-02-02

申请人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Yukio Komatsu ,  Tetsuya Nakai ,  Seiichi Nakamura

IPC分类号： H01L21/425 ,  H01L21/31

CPC分类号： H01L21/76243

摘要： A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300° C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

摘要翻译： 获得具有薄膜厚度的BOX层的SIMOX晶片，而不会降低生产率或质量劣化。 一种用于制造SIMOX晶片的方法，包括：在硅晶片中形成第一离子注入层的步骤; 形成处于非晶态的第二离子注入层的步骤; 以及将晶片保持在含氧气氛中的不低于1300℃但小于硅熔点6〜36小时的高温热处理步骤，以改变第一和第二离子交换树脂， 将注入层置于BOX层中，在高温热处理的升温过程中将含有不少于0.1体积％但小于1.0体积％的氯的气体混入大气中。

公开(公告)号：US07410877B2

公开(公告)日：2008-08-12

申请号：US11471750

申请日：2006-06-20

申请人： Yoshiro Aoki ,  Riyuusuke Kasamatsu ,  Hideki Nishihata ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Riyuusuke Kasamatsu ,  Hideki Nishihata ,  Seiichi Nakamura

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/76243

摘要： A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form an amorphous layer; and heat-treating the silicon wafer to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Alternatively, the method for manufacturing a SIMOX wafer includes: in the formation of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300° C. or more; and in the formation of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300° C.

摘要翻译： 一种制造SIMOX晶片的方法包括：加热硅晶片，注入氧离子以形成高氧浓度层; 将氧离子注入通过形成高氧浓度层获得的硅晶片中以形成非晶层; 并对硅晶片进行热处理以形成掩埋氧化物层，其中在形成非晶层时，在将硅晶片预热到低于形成高温的加热温度的温度之后，进行氧离子的注入 氧浓度层。 或者，制造SIMOX晶片的方法包括：在高氧浓度层的形成中，在300℃以上的温度下加热硅晶片时，注入氧离子; 并且在形成非晶层时，将硅晶片预热后的氧离子注入到低于300℃的温度。

公开(公告)号：US20070020949A1

公开(公告)日：2007-01-25

申请号：US11471750

申请日：2006-06-20

申请人： Yoshiro Aoki ,  Riyuusuke Kasamatsu ,  Hideki Nishihata ,  Seiichi Nakamura

发明人： Yoshiro Aoki ,  Riyuusuke Kasamatsu ,  Hideki Nishihata ,  Seiichi Nakamura

IPC分类号： H01L21/31 ,  H01L21/425 ,  H01L21/469

CPC分类号： H01L21/76243

摘要： One embodiment of this method for manufacturing a SIMOX wafer includes: while heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer so as to form an amorphous layer; and heat-treating the silicon wafer obtained by the forming of the amorphous layer so as to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Another embodiment of this method for manufacturing a SIMOX wafer includes: in the above forming of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300° C. or more; and in the above forming of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300° C.

摘要翻译： 用于制造SIMOX晶片的该方法的一个实施例包括：在加热硅晶片的同时，注入氧离子以形成高氧浓度层; 将氧离子注入到通过形成高氧浓度层而获得的硅晶片中以形成非晶层; 对通过形成非晶层而获得的硅晶片进行热处理，以形成掩埋氧化物层，其中在形成非晶层时，在将硅晶片预热到较低温度之后，进行氧离子的注入 比形成高氧浓度层的加热温度高。 该SIMOX晶片的制造方法的另一个实施例包括：在上述高氧浓度层的形成中，在300℃以上的温度下加热硅晶片时，注入氧离子; 并且在上述非晶层的形成中，将硅晶片预热后的氧离子注入到低于300℃的温度。

公开(公告)号：US20080213989A1

公开(公告)日：2008-09-04

申请号：US12118928

申请日：2008-05-12

申请人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

发明人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  Y10S438/978

摘要： A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

摘要翻译： 硅晶片包括用于形成电子器件的主面; 末端区域 以及位于主面和端部区域之间的锥形区域，其中硅晶片的厚度逐渐减小，并且具有大于零度且小于9.5度的角度的倾斜度或角度 与主面大于19度。 通过在硅晶片中形成掩埋氧化物层制备的SOI晶片包括与上述基本相同的主面，端部区域和锥形区域。 一种制造SOI晶片的方法包括将氧离子注入到硅晶片中的步骤; 并对所得到的硅晶片进行热处理，使得在硅晶片中形成掩埋氧化物层。

公开(公告)号：US07838387B2

公开(公告)日：2010-11-23

申请号：US12118928

申请日：2008-05-12

申请人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

发明人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

IPC分类号： H01L21/762

CPC分类号： H01L21/76243 ,  Y10S438/978

摘要： A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

摘要翻译： 硅晶片包括用于形成电子器件的主面; 末端区域 以及位于主面和端部区域之间的锥形区域，其中硅晶片的厚度逐渐减小，并且具有大于零度且小于9.5度的角度的倾斜度或角度 与主面大于19度。 通过在硅晶片中形成掩埋氧化物层制备的SOI晶片包括与上述基本相同的主面，端部区域和锥形区域。 一种制造SOI晶片的方法包括将氧离子注入到硅晶片中的步骤; 并对所得到的硅晶片进行热处理，使得在硅晶片中形成掩埋氧化物层。

公开(公告)号：US07655315B2

公开(公告)日：2010-02-02

申请号：US11331216

申请日：2006-01-13

申请人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

发明人： Eiji Kamiyama ,  Seiichi Nakamura ,  Tetsuya Nakai

IPC分类号： B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC分类号： H01L21/76243

摘要： A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

摘要翻译： 硅晶片包括用于形成电子器件的主面; 末端区域 以及位于主面和端部区域之间的锥形区域，其中硅晶片的厚度逐渐减小，并且具有大于零度且小于9.5度的角度的倾斜度或角度 与主面大于19度。 通过在硅晶片中形成掩埋氧化物层制备的SOI晶片包括与上述基本相同的主面，端部区域和锥形区域。 一种制造SOI晶片的方法包括将氧离子注入到硅晶片中的步骤; 并对所得到的硅晶片进行热处理，使得在硅晶片中形成掩埋氧化物层。