Memory system
    1.
    再颁专利
    Memory system 有权
    内存系统

    公开(公告)号:USRE42398E1

    公开(公告)日:2011-05-24

    申请号:US10931247

    申请日:2004-08-31

    IPC分类号: G06F12/14

    摘要: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.

    摘要翻译: 在使用可移动记录介质的存储器系统和存储在记录介质中的数据的情况下,将用于从其他记录介质识别的识别信息保存在记录介质中,并且当使用存储在记录介质中的数据时,记录的识别信息 需要介质 结果,当使用闪存卡等时,版权被可靠地保护。

    Memory system
    2.
    发明授权
    Memory system 有权
    内存系统

    公开(公告)号:US06446177B1

    公开(公告)日:2002-09-03

    申请号:US09407168

    申请日:1999-09-28

    IPC分类号: G06F1214

    摘要: In a memory system using a removable recording medium and data stored in the recording medium, identifying information for identifying each recording medium from others is held in the recording medium, and when data stored in the recording medium is used, the identifying information of the recording medium is required. As a result, when a flash memory card, etc. is used, a copyright is reliably protected.

    摘要翻译: 在使用可移动记录介质的存储器系统和存储在记录介质中的数据的情况下,将用于从其他记录介质识别的识别信息保存在记录介质中,并且当使用存储在记录介质中的数据时,记录的识别信息 需要介质 结果,当使用闪存卡等时,版权被可靠地保护。

    MEMORY SYSTEM AND DATA WRITING METHOD
    4.
    发明申请
    MEMORY SYSTEM AND DATA WRITING METHOD 失效
    记忆系统和数据写入方法

    公开(公告)号:US20080043534A1

    公开(公告)日:2008-02-21

    申请号:US11846334

    申请日:2007-08-28

    IPC分类号: G11C16/04

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    摘要翻译: 公开了一种数据写入方法。 在包括NAND闪速存储器和控制存储器的控制器的存储器系统中,存储器系统存储从主机向NAND闪速存储器提供的数据,该数据写入方法包括以下步骤:指定列地址,其中列失败 已经在控制器的NAND闪速存储器中发生了这种情况,并且在写入NAND闪速存储器期间,将第一逻辑电平的数据写入到与指定的列地址对应的存储单元中,而不管从控制器提供的写数据如何 。

    Memory system and data writing method

    公开(公告)号:US20060171202A1

    公开(公告)日:2006-08-03

    申请号:US11193433

    申请日:2005-08-01

    IPC分类号: G11C16/04

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    Memory system and data writing method
    6.
    发明授权
    Memory system and data writing method 失效
    内存系统和数据写入方式

    公开(公告)号:US07830711B2

    公开(公告)日:2010-11-09

    申请号:US12483275

    申请日:2009-06-12

    IPC分类号: G11C16/04

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    摘要翻译: 公开了一种数据写入方法。 在包括NAND闪速存储器和控制存储器的控制器的存储器系统中,存储器系统存储从主机向NAND闪速存储器提供的数据,该数据写入方法包括以下步骤:指定列地址,其中列失败 已经在控制器的NAND闪速存储器中发生了这种情况,并且在写入NAND闪速存储器期间,将第一逻辑电平的数据写入到与指定的列地址对应的存储单元中,而不管从控制器提供的写数据如何 。

    MEMORY SYSTEM AND DATA WRITING METHOD
    7.
    发明申请
    MEMORY SYSTEM AND DATA WRITING METHOD 失效
    记忆系统和数据写入方法

    公开(公告)号:US20090244974A1

    公开(公告)日:2009-10-01

    申请号:US12483275

    申请日:2009-06-12

    IPC分类号: G11C16/06 G11C16/04

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    摘要翻译: 公开了一种数据写入方法。 在包括NAND闪速存储器和控制存储器的控制器的存储器系统中,存储器系统存储从主机向NAND闪速存储器提供的数据,该数据写入方法包括以下步骤:指定列地址,其中列失败 已经在控制器的NAND闪速存储器中发生了这种情况,并且在写入NAND闪速存储器期间,将第一逻辑电平的数据写入到与指定的列地址对应的存储单元中,而不管从控制器提供的写数据如何 。

    Memory system and data writing method
    8.
    发明授权
    Memory system and data writing method 失效
    内存系统和数据写入方式

    公开(公告)号:US07558113B2

    公开(公告)日:2009-07-07

    申请号:US11846334

    申请日:2007-08-28

    IPC分类号: G11C16/04

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    摘要翻译: 公开了一种数据写入方法。 在包括NAND闪速存储器和控制存储器的控制器的存储器系统中,存储器系统存储从主机向NAND闪速存储器提供的数据,该数据写入方法包括以下步骤:指定列地址,其中列失败 已经在控制器的NAND闪速存储器中发生了这种情况,并且在写入NAND闪速存储器期间,将第一逻辑电平的数据写入到与指定的列地址对应的存储单元中,而不管从控制器提供的写数据如何 。

    Memory system and data writing method
    9.
    发明授权
    Memory system and data writing method 失效
    内存系统和数据写入方式

    公开(公告)号:US07376012B2

    公开(公告)日:2008-05-20

    申请号:US11193433

    申请日:2005-08-01

    IPC分类号: G11C11/34

    摘要: A data writing method is disclosed. In a memory system comprising a NAND flash memory and a controller which controls the memory, the memory system storing data provided from a host to the NAND flash memory, the data writing method comprises a steps of specifying a column address in which a column failure which has occurred in the NAND flash memory by the controller, and a step of, during writing into the NAND flash memory, writing data of a first logic level into a memory cell which corresponds to the specified column address regardless of write data provided from the controller.

    摘要翻译: 公开了一种数据写入方法。 在包括NAND闪速存储器和控制存储器的控制器的存储器系统中,存储器系统存储从主机向NAND闪速存储器提供的数据,该数据写入方法包括以下步骤:指定列地址,其中列失败 已经在控制器的NAND闪速存储器中发生了这种情况,并且在写入NAND闪速存储器期间,将第一逻辑电平的数据写入到与指定的列地址对应的存储单元中,而不管从控制器提供的写数据如何 。

    Method for controlling non-volatile semiconductor memory system
    10.
    发明授权
    Method for controlling non-volatile semiconductor memory system 有权
    用于控制非易失性半导体存储器系统的方法

    公开(公告)号:US09009387B2

    公开(公告)日:2015-04-14

    申请号:US12702134

    申请日:2010-02-08

    摘要: In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.

    摘要翻译: 在使用通过连接器插入到电子设备中以添加其存储功能的存储介质的存储器系统中,存储介质具有接地端子,电源端子,控制端子和数据输入/输出端子, 并且连接器具有顺序地连接到每个端子的功能。 当存储介质插入连接器中时,存储介质的接地端子和控制端子连接到连接器的相应端子,在存储介质的电源端子和数据输入/输出端子连接到存储介质的相应端子 连接器。 因此,当将存储卡插入存储器系统或从存储器系统弹出时,可以提高稳定性。