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    User equipment connectable to an external device
    3.
    发明授权
    User equipment connectable to an external device 有权
    用户设备可连接到外部设备

    公开(公告)号：US08949494B2

    公开(公告)日：2015-02-03

    申请号：US13540112

    申请日：2012-07-02

    申请人： Jae-Hun Jung ,  Shin-Hyuk Kang ,  You-Jin Kang ,  Byeong-Tae Kim ,  Jung-Wook Lee ,  Hyuk-Jun Jung ,  Jae-Uk Cha

    发明人： Jae-Hun Jung ,  Shin-Hyuk Kang ,  You-Jin Kang ,  Byeong-Tae Kim ,  Jung-Wook Lee ,  Hyuk-Jun Jung ,  Jae-Uk Cha

    IPC分类号： G06F3/01 ,  G06F1/16 ,  G06F13/40

    CPC分类号： G06F1/1632 ,  G06F13/4081

    摘要： Provided are user equipment connectable to an external device and a method for establishing a connection between user equipment including second constituent elements and an external device including first constituent elements and controlling the external device. The method may include sensing the connection to the external device, obtaining first constituent element information from the external device through the connection, wherein the first constituent element information includes information on first constituent elements of the external device, selecting target constituent elements to control from the first constituent elements of the external device based on the obtained first constituent element information, reconfiguring a control path for controlling the selected target constituent elements of the external device, and controlling the selected target constituent elements of the external device through the reconfigured control path.

    摘要翻译： 提供了可连接到外部设备的用户设备以及用于在包括第二组成元素的用户设备和包括第一组成元素的外部设备之间建立连接的方法以及控制外部设备的方法。 该方法可以包括感测与外部设备的连接，通过连接从外部设备获得第一组成元素信息，其中第一组成元素信息包括关于外部设备的第一组成元素的信息，从 基于所获得的第一组成元素信息，外部设备的第一组成元素，重新配置用于控制外部设备的所选择的目标组成元素的控制路径，以及通过重新配置的控制路径来控制所选择的外部设备的组成元素。

    USER EQUIPMENT CONNECTABLE TO AN EXTERNAL DEVICE
    4.
    发明申请
    USER EQUIPMENT CONNECTABLE TO AN EXTERNAL DEVICE 有权
    用户设备连接到外部设备

    公开(公告)号：US20130007301A1

    公开(公告)日：2013-01-03

    申请号：US13540112

    申请日：2012-07-02

    申请人： Jae-Hun JUNG ,  Shin-Hyuk Kang ,  You-Jin Kang ,  Byeong-Tae Kim ,  Jung-Wook Lee ,  Hyuk-Jun Jung ,  Jae-Uk Cha

    发明人： Jae-Hun JUNG ,  Shin-Hyuk Kang ,  You-Jin Kang ,  Byeong-Tae Kim ,  Jung-Wook Lee ,  Hyuk-Jun Jung ,  Jae-Uk Cha

    IPC分类号： G06F3/00

    CPC分类号： G06F1/1632 ,  G06F13/4081

    摘要： Provided are user equipment connectable to an external device and a method for establishing a connection between user equipment including second constituent elements and an external device including first constituent elements and controlling the external device. The method may include sensing the connection to the external device, obtaining first constituent element information from the external device through the connection, wherein the first constituent element information includes information on first constituent elements of the external device, selecting target constituent elements to control from the first constituent elements of the external device based on the obtained first constituent element information, reconfiguring a control path for controlling the selected target constituent elements of the external device, and controlling the selected target constituent elements of the external device through the reconfigured control path.

    摘要翻译： 提供了可连接到外部设备的用户设备以及用于在包括第二组成元素的用户设备和包括第一组成元素的外部设备之间建立连接的方法以及控制外部设备的方法。 该方法可以包括感测与外部设备的连接，通过连接从外部设备获得第一组成元素信息，其中第一组成元素信息包括关于外部设备的第一组成元素的信息，从 基于所获得的第一组成元素信息，外部设备的第一组成元素，重新配置用于控制外部设备的所选择的目标组成元素的控制路径，以及通过重新配置的控制路径来控制所选择的外部设备的组成元素。

    CONTROLLING USER EQUIPMENT AS TOUCH PAD FOR EXTERNAL DEVICE CONNECTED THERETO
    5.
    发明申请
    CONTROLLING USER EQUIPMENT AS TOUCH PAD FOR EXTERNAL DEVICE CONNECTED THERETO 审中-公开
    控制用户设备作为与外部设备连接的触摸板

    公开(公告)号：US20130050122A1

    公开(公告)日：2013-02-28

    申请号：US13598741

    申请日：2012-08-30

    申请人： You-Jin KANG ,  Shin-Hyuk Kang ,  Jung-Wook Lee ,  Jae-Hun Jung ,  Jae-Uk Cha

    发明人： You-Jin KANG ,  Shin-Hyuk Kang ,  Jung-Wook Lee ,  Jae-Hun Jung ,  Jae-Uk Cha

    IPC分类号： G06F3/041

    CPC分类号： G06F3/041 ,  G06F3/0227 ,  G06F3/0416 ,  G06F3/0488

    摘要： Provided is a method for controlling user equipment as a touch pad for an external device connected to the user equipment. An operation mode may be changed to a pointing device operation mode when the user equipment is coupled to the external device. In the pointing device operation mode, a touch input may be received through a touch screen panel of the user equipment. A pointer may be displayed on a display unit of the external device corresponding to a coordinate value of the touch input made on the touch screen panel. An operation associated with the received touch input may be performed in the user equipment.

    摘要翻译： 提供了一种用于控制用户设备作为连接到用户设备的外部设备的触摸板的方法。 当用户设备耦合到外部设备时，可以将操作模式改变为指点设备操作模式。 在指示设备操作模式中，可以通过用户设备的触摸屏面板接收触摸输入。 可以在对应于在触摸屏面板上进行的触摸输入的坐标值的外部设备的显示单元上显示指针。 可以在用户设备中执行与所接收的触摸输入相关联的操作。

    Pre-fabricated sidewalk block having a heating wire
    6.
    发明授权
    Pre-fabricated sidewalk block having a heating wire 有权
    具有加热线的预制人行道块

    公开(公告)号：US08550744B1

    公开(公告)日：2013-10-08

    申请号：US13992246

    申请日：2011-10-17

    申请人： Jung-Wook Lee

    发明人： Jung-Wook Lee

    IPC分类号： H05B3/20

    CPC分类号： E01C11/265 ,  E01C5/06

    摘要： The present invention relates to a pre-fabricated sidewalk block having a heating wire, which may effectively transmit heat through the upper portion of the sidewalk block without losing heat radiated from the heating wire to the ground; which may be easily assembled; and which may absorb the impact of walking. The pre-fabricated sidewalk having the heating wire includes: a lower block having a plurality of first groove parts in the top surface thereof; a buffer plate having a plurality of second groove parts protruding downward so that the plurality of groove parts are inserted and coupled into the first groove parts of the lower block, and which has a first heating wire insertion groove in the length direction in the top surface between the second groove parts which are adjacent to each other; an upper block having a plurality of protrusion parts protruding downward so that the bottom surface thereof is inserted and coupled to the second groove parts of the buffer plate, and which has a second heating wire insertion groove corresponding to the first heating wire insertion groove in the bottom surface between the protrusions which are adjacent to each other; and a heating wire inserted between the first heating wire insertion groove and the second heating wire insertion groove.

    摘要翻译： 本发明涉及一种具有加热丝的预制人行道块，其可以有效地将热量透过人行道块的上部，而不会损失从加热丝辐射到地面的热量; 其可以容易地组装; 并且可以吸收步行的影响。 具有加热丝的预制人行道包括：下块，其顶表面具有多个第一槽部; 缓冲板，其具有向下突出的多个第二槽部，使得多个槽部插入并联接到下部块的第一槽部，并且在顶面的长度方向上具有第一加热丝线插入槽 在彼此相邻的第二槽部之间; 上部块具有向下突出的多个突起部分，使得其底表面插入并联接到缓冲板的第二槽部分，并且具有与第一加热丝线插入槽对应的第二加热丝线插入槽 突起之间的底面相邻; 以及插入在第一加热线插入槽和第二加热线插入槽之间的加热线。

    Method of depositing Ge-Sb-Te thin film
    7.
    发明授权
    Method of depositing Ge-Sb-Te thin film 有权
    Ge-Sb-Te薄膜沉积方法

    公开(公告)号：US08029859B2

    公开(公告)日：2011-10-04

    申请号：US11507829

    申请日：2006-08-22

    申请人： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    发明人： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    IPC分类号： C23C16/00 ,  H05H1/24 ,  C23C16/06

    CPC分类号： C23C16/45523 ,  C23C16/30

    摘要： There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

    摘要翻译： 提供了一种沉积Ge-Sb-Te薄膜的方法，包括：Ge-Sb-Te薄膜形成步骤，用于进料和吹扫包括Ge，Sb和Te中任一种的第一前体;第二前体，包括 Ge，Sb和Te中的另一个，和包含Ge，Sb和Te中的另一个的第三前体进入并安装晶片的腔室，并在晶片上形成Ge-Sb-Te薄膜; 以及在供给第一至第三前体中的任何一个的同时进料反应气体的反应气体供给步骤。

    Method of depositing Ge-Sb-Te thin film
    8.
    发明申请
    Method of depositing Ge-Sb-Te thin film 有权
    Ge-Sb-Te薄膜沉积方法

    公开(公告)号：US20070048977A1

    公开(公告)日：2007-03-01

    申请号：US11507829

    申请日：2006-08-22

    申请人： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    发明人： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    IPC分类号： C23C16/00 ,  H01L21/20 ,  H01L21/36 ,  H01L31/20

    CPC分类号： C23C16/45523 ,  C23C16/30

    摘要： There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

    摘要翻译： 提供了一种沉积Ge-Sb-Te薄膜的方法，包括：Ge-Sb-Te薄膜形成步骤，用于进料和吹扫包括Ge，Sb和Te中任一种的第一前体;第二前体，包括 Ge，Sb和Te中的另一个，和包含Ge，Sb和Te中的另一个的第三前体进入并安装晶片的腔室，并在晶片上形成Ge-Sb-Te薄膜; 以及在供给第一至第三前体中的任何一个的同时进料反应气体的反应气体供给步骤。

    Method of forming chalcogenide thin film
    9.
    发明授权
    Method of forming chalcogenide thin film 有权
    形成硫族化物薄膜的方法

    公开(公告)号：US08772077B2

    公开(公告)日：2014-07-08

    申请号：US12936563

    申请日：2009-04-16

    申请人： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

    发明人： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

    IPC分类号： H01L21/00

    CPC分类号： C23C16/305 ,  C23C16/042 ,  C23C16/45527

    摘要： The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.

    摘要翻译： 本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。 在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。 这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。 为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫 供给到基板上的反应气体。 执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率 速率在图案的上部。 根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜 在图案的内部的速率大于图案上部的成膜速率。

    METHOD OF FORMING CHALCOGENIDE THIN FILM
    10.
    发明申请
    METHOD OF FORMING CHALCOGENIDE THIN FILM 有权
    形成聚乙烯薄膜的方法

    公开(公告)号：US20110027976A1

    公开(公告)日：2011-02-03

    申请号：US12936563

    申请日：2009-04-16

    申请人： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

    发明人： Ki-Hoon Lee ,  Jung-Wook Lee ,  Dong-Ho You

    IPC分类号： H01L21/20

    CPC分类号： C23C16/305 ,  C23C16/042 ,  C23C16/45527

    摘要： The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.

    摘要翻译： 本发明涉及一种形成用于相变存储器的硫族化物薄膜的方法。 在根据本发明的形成硫族化物薄膜的方法中，将形成有图案的基板装载到反应器中，并将源气体供应到基板上。 这里，源气体包括选自锗（Ge）源气体，镓（Ga）源气体，铟（In）源气体，硒（Se）源气体，锑（Sb）源气体，碲（ Te）源气体，锡（Sn）源气体，银（Ag）源气体和硫（S）源气体。 为了清洗供给到基板上的源气体，将第一吹扫气体供给到基板上，然后将用于还原原料气体的反应气体供给到基板上，向基板供给第二吹扫气体以便吹扫 供给到基板上的反应气体。 执行至少一种操作，即改变第一吹扫气体的供应时间和/或调节反应器的内部压力，以确保图案内部的沉积速率大于沉积物的沉积速率 速率在图案的上部。 根据本发明，可以通过改变源气体的吹扫时间或调节反应器的内部压力来形成具有优异间隙填充性质的硫族化物薄膜，以确保成膜 在图案的内部的速率大于图案上部的成膜速率。