公开(公告)号：US20120199015A1

公开(公告)日：2012-08-09

申请号：US13500649

申请日：2010-10-08

申请人： Youhei Seguchi ,  Shinya Ueda ,  Takashi Utsumi

发明人： Youhei Seguchi ,  Shinya Ueda ,  Takashi Utsumi

IPC分类号： A47J27/04

CPC分类号： F24C15/327 ,  A21B3/04 ,  A47J27/04 ,  F22B1/284

摘要： A steam generation device is placed at a lower portion of a side wall of a heating chamber. A steam jet-out part is placed upper than the steam generation device of the side wall of the heating chamber with a distance from the steam generation device. Thus, even if bumping has occurred within a water storage part of the steam generation device, causing boiling water to rush out from a steam supply port into a steam supply pipe, the boiling water is prevented from intruding into a steam jet-out part.

摘要翻译： 蒸汽发生装置设置在加热室的侧壁的下部。 蒸汽喷射部分放置在距离蒸汽发生装置一定距离的加热室的侧壁的蒸汽产生装置的上方。 因此，即使在蒸汽发生装置的蓄水部内发生碰撞，使沸水从蒸汽供给口排出到蒸汽供给管中，也能够防止沸水侵入蒸汽喷出部。

公开(公告)号：US08850968B2

公开(公告)日：2014-10-07

申请号：US13500649

申请日：2010-10-08

申请人： Youhei Seguchi ,  Shinya Ueda ,  Takashi Utsumi

发明人： Youhei Seguchi ,  Shinya Ueda ,  Takashi Utsumi

IPC分类号： A23L1/00 ,  A47J27/04 ,  F24C15/34 ,  F24C15/32 ,  A21B3/04 ,  F22B1/28

CPC分类号： F24C15/327 ,  A21B3/04 ,  A47J27/04 ,  F22B1/284

摘要： A steam generation device is placed at a lower portion of a side wall of a heating chamber. A steam jet-out part is placed upper than the steam generation device of the side wall of the heating chamber with a distance from the steam generation device. Thus, even if bumping has occurred within a water storage part of the steam generation device, causing boiling water to rush out from a steam supply port into a steam supply pipe, the boiling water is prevented from intruding into a steam jet-out part.

摘要翻译： 蒸汽发生装置设置在加热室的侧壁的下部。 蒸汽喷射部分放置在距离蒸汽发生装置一定距离的加热室的侧壁的蒸汽产生装置的上方。 因此，即使在蒸汽发生装置的蓄水部内发生碰撞，使沸水从蒸汽供给口排出到蒸汽供给管中，也能够防止沸水侵入蒸汽喷出部。

公开(公告)号：US6110845A

公开(公告)日：2000-08-29

申请号：US55306

申请日：1998-04-06

申请人： Youhei Seguchi ,  Nobuaki Tokushige

发明人： Youhei Seguchi ,  Nobuaki Tokushige

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/324 ,  H01L21/26

CPC分类号： H01L21/2026 ,  H01L21/26533 ,  H01L21/76243

摘要： First, oxygen ions of a high concentration are implanted into a silicon substrate 1, by which a high-concentration oxygen implanted layer 3 is formed. Subsequently, a heat treatment for about 4 hours at 1350.degree. C. is carried out in an atmosphere of Ar with a 0.5% concentration oxygen for the formation of a buried oxide layer 5. Next, pulse laser annealing is performed for melting and recrystallization of the surface silicon layer. Pulsed laser beam is radiated at an energy density of 1200 mJ/cm.sup.2 or more. The pulsed laser beam is able to melt the semiconductor surface in several 10's nsec by virtue of its extremely large power density in irradiation of 10.sup.7 W/cm.sup.2. By iterating this pulse laser annealing, the surface silicon layer iterates to melt and recrystallize, activating the activities of crystal defects, by which damage recovery based on crystal seeds is accomplished.

摘要翻译： 首先，将高浓度的氧离子注入到硅衬底1中，由此形成高浓度氧注入层3。 随后，在具有0.5％浓度氧的Ar的气氛中，在1350℃下进行约4小时的热处理，以形成掩埋氧化物层5.接下来，进行脉冲激光退火以进行熔融和重结晶 表面硅层。 脉冲激光束以1200mJ / cm 2以上的能量密度照射。 脉冲激光束能够在107W / cm2的照射下由于其极大的功率密度而在几十秒的时间内熔化半导体表面。 通过重复该脉冲激光退火，表面硅层重复地熔融并重结晶，激活晶体缺陷的活性，由此完成基于晶种的损伤恢复。