Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor
    1.
    发明申请
    Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor 有权
    前体成分,形成层的方法,形成栅极结构的方法和形成电容器的方法

    公开(公告)号:US20110183527A1

    公开(公告)日:2011-07-28

    申请号:US13035659

    申请日:2011-02-25

    IPC分类号: H01L21/314

    摘要: In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

    摘要翻译: 在形成层的方法中,通过使前体组合物与给电子化合物接触来稳定前体组合物,该组合物包含金属和与金属螯合的配体,以将稳定化的前体组合物提供到基底上。 将反应物引入到底物上以与稳定化的前体组合物中的金属结合。 在将供电子化合物引入到基板上之后,将前体组合物引入到基板上,将稳定化的前体组合物提供到基板上。 引入前体组合物之前和之后,将电子给体化合物连续引入到基质上。