公开(公告)号：US08836027B2

公开(公告)日：2014-09-16

申请号：US13425357

申请日：2012-03-20

申请人： Young Jin Woo ,  Kong Soon Park ,  Young Sik Kim

发明人： Young Jin Woo ,  Kong Soon Park ,  Young Sik Kim

IPC分类号： H01L27/06 ,  H03K17/10 ,  H03K17/687 ,  H01L29/78 ,  H01L29/10

CPC分类号： H03K17/102 ,  H01L29/1083 ,  H01L29/7835 ,  H03K17/6874

摘要： The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.

摘要翻译： 开关电路技术领域本发明涉及开关电路，更具体地说，涉及在IC（集成电路）内使用LDMOS（横向扩散金属氧化物半导体）器件的开关电路。 在使用根据本发明的实施例的LDMOS器件的开关电路中，可以通过电流源和电阻稳定地控制LDMOS器件的栅极 - 源极电压（VGS），开关的特性可以保持不变 通过以互补的方式使用N型LDMOS和P型LDMOS来实现两端（A和B）的电压，并且由电流源产生的电流在开关内部偏移而不流到开关的外部 。