公开(公告)号：US20150200285A1

公开(公告)日：2015-07-16

申请号：US14623394

申请日：2015-02-16

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/778 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

摘要翻译： 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US20160197161A1

公开(公告)日：2016-07-07

申请号：US15069148

申请日：2016-03-14

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/12

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US20130119347A1

公开(公告)日：2013-05-16

申请号：US13611127

申请日：2012-09-12

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L21/335 ,  H01L29/775

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

摘要翻译： 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US20150255592A1

公开(公告)日：2015-09-10

申请号：US14718968

申请日：2015-05-21

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/66 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.