公开(公告)号：US20150255592A1

公开(公告)日：2015-09-10

申请号：US14718968

申请日：2015-05-21

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/66 ,  H01L29/12 ,  H01L29/20

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US20150200285A1

公开(公告)日：2015-07-16

申请号：US14623394

申请日：2015-02-16

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/778 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

摘要翻译： 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US20160197161A1

公开(公告)日：2016-07-07

申请号：US15069148

申请日：2016-03-14

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/12

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US20130119347A1

公开(公告)日：2013-05-16

申请号：US13611127

申请日：2012-09-12

申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

IPC分类号： H01L21/335 ,  H01L29/775

CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

摘要翻译： 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US20160172450A1

公开(公告)日：2016-06-16

申请号：US15050867

申请日：2016-02-23

申请人： Dong-soo LEE ,  Myoung-jae LEE ,  Seong-ho CHO ,  Mohammad Rakib UDDIN ,  David SEO ,  Moon-seung YANG ,  Sang-moon LEE ,  Sung-hun LEE ,  Ji-hyun HUR ,  Eui-chul HWANG

发明人： Dong-soo LEE ,  Myoung-jae LEE ,  Seong-ho CHO ,  Mohammad Rakib UDDIN ,  David SEO ,  Moon-seung YANG ,  Sang-moon LEE ,  Sung-hun LEE ,  Ji-hyun HUR ,  Eui-chul HWANG

IPC分类号： H01L29/34 ,  H01L21/322

CPC分类号： H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US20150061088A1

公开(公告)日：2015-03-05

申请号：US14207880

申请日：2014-03-13

申请人： Dong-soo LEE ,  Myoung-Jae LEE ,  Seong-ho CHO ,  Mohammad Rakib Uddin ,  David SEO ,  Moon-seung YANG ,  Sang-moon LEE ,  Sung-hun LEE ,  Ji-hyun HUR ,  Eui-chul HWANG

发明人： Dong-soo LEE ,  Myoung-Jae LEE ,  Seong-ho CHO ,  Mohammad Rakib Uddin ,  David SEO ,  Moon-seung YANG ,  Sang-moon LEE ,  Sung-hun LEE ,  Ji-hyun HUR ,  Eui-chul HWANG

IPC分类号： H01L29/20 ,  H01L21/322

CPC分类号： H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

摘要翻译： 本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。 半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。 吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。