MEMORY DEVICE THAT PERFORMS INTERNAL COPY OPERATION
    1.
    发明申请
    MEMORY DEVICE THAT PERFORMS INTERNAL COPY OPERATION 审中-公开
    执行内部复印操作的记忆设备

    公开(公告)号:US20160147460A1

    公开(公告)日:2016-05-26

    申请号:US14852774

    申请日:2015-09-14

    IPC分类号: G06F3/06

    摘要: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

    摘要翻译: 提供执行内部复制操作的存储器件。 存储装置可以与内部复制命令一起接收源地址,目的地地址和页面大小信息,将源地址与目的地地址进行比较,并执行内部复制操作。 内部复制操作可以是内部块复制操作,银行间复制操作或内部银行复制操作。 可以基于页面大小信息来执行关于一页数据,半页数据或四分之一页数据的内部复制操作。 存储器件可以作为标志信号输出指示内部复制操作已经完成的复制完成信号。

    MEMORY DEVICE HAVING PAGE STATE INFORMING FUNCTION
    2.
    发明申请
    MEMORY DEVICE HAVING PAGE STATE INFORMING FUNCTION 有权
    具有页面状态信息功能的记忆设备

    公开(公告)号:US20160148654A1

    公开(公告)日:2016-05-26

    申请号:US14852890

    申请日:2015-09-14

    IPC分类号: G11C7/00

    摘要: A memory device, system, and/or method are provided for performing a page state informing function. The memory device may compare one or more row addresses received along with a command, determine the page open/close state according to a page hit or miss generated as a result of comparison, count read or write commands with respect to pages corresponding to a same row address, and determine the page open/close state according to a read or write command number generated as a result of counting. The memory device may determine a page open/close state with respect to a corresponding page based on a page hit/miss and a read or write command number and output a flag signal. The memory device may provide the page open/close state for each channel. A memory controller may establish different page open/close policies for each channel.

    摘要翻译: 提供了用于执行页面状态通知功能的存储器件,系统和/或方法。 存储器装置可以比较与命令一起接收的一个或多个行地址,根据作为比较的结果产生的页面命中或未命中来确定页面打开/关闭状态,相对于对应于页面的页面的计数读取或写入命令 行地址,并根据由于计数产生的读或写命令号确定页打开/关闭状态。 存储装置可以基于页命中/未命中和读或写命令号确定相对于页的页打开/关闭状态,并输出标志信号。 存储器件可以为每个通道提供页面打开/关闭状态。 存储器控制器可以为每个通道建立不同的页面打开/关闭策略。

    SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING REDUNDANCY CELLS
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING REDUNDANCY CELLS 有权
    具有冗余电池的半导体存储器件和系统

    公开(公告)号:US20130117602A1

    公开(公告)日:2013-05-09

    申请号:US13670792

    申请日:2012-11-07

    IPC分类号: G06F11/20 G06F12/00

    摘要: In one embodiment, the memory device includes a memory cell array having at least a first memory cell group, a second memory cell group and a redundancy memory cell group. The first memory cell group includes a plurality of first memory cells associated with a first data line, the second memory cell group includes a plurality of second memory cells associated with a second data line, and the redundancy memory cell group includes a plurality of redundancy memory cells associated with a redundancy data line. A data line selection circuit is configured to provide a data path between an input/output node and one of the first data line, the second data and the redundancy data line.

    摘要翻译: 在一个实施例中,存储器件包括具有至少第一存储单元组,第二存储单元组和冗余存储单元组的存储单元阵列。 第一存储单元组包括与第一数据线相关联的多个第一存储器单元,第二存储单元组包括与第二数据线相关联的多个第二存储器单元,并且冗余存储单元组包括多个冗余存储器 与冗余数据线相关联的单元。 数据线选择电路被配置为在输入/输出节点与第一数据线,第二数据和冗余数据线之一之间提供数据路径。