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    MEDICAL GUIDE WIRE
    1.
    发明申请
    MEDICAL GUIDE WIRE 审中-公开
    医疗指导线

    公开(公告)号：US20130023853A1

    公开(公告)日：2013-01-24

    申请号：US13521300

    申请日：2011-01-25

    申请人： Yu Li ,  Qiaorong Jin ,  Sen Wang ,  Zhiyong Xie ,  Qiyi Luo

    发明人： Yu Li ,  Qiaorong Jin ,  Sen Wang ,  Zhiyong Xie ,  Qiyi Luo

    IPC分类号： A61M25/09

    CPC分类号： A61M25/09 ,  A61M2025/09083 ,  A61M2025/09166 ,  A61M2025/09175

    摘要： A medical guide wire comprises a metal core (1), a coil (2), a delivery element (3) and a boss (4). The metal core (1) has a variable-diameter structure, which consists of a linear structure (1-3), a stepped structure (1-2) and a linear structure (1-1) from a proximal end to a distal end. The number of the coil (2) is one or more, and the coil(s) is/are fixed on the linear structure (1-1) and the stepped structure (1-2) at the distal end of the metal core (1). The number of the delivery element (3) is one or more, and the delivery element(s) is/are fixed to the stepped structure (1-2) of the metal core (1). The boss (4) is fixed on the stepped structure (1-2) of the metal core (1) behind the delivery element (3). When the medical guide wire is delivering an implant instrument, the delivery element on the medical guide wire makes each segment of the implant instrument receive even resistance by rubbing the inner wall of the implant instrument, thereby integrally delivering the implant instrument into the human lumen.

    摘要翻译： 医疗用导线包括金属芯（1），线圈（2），输送元件（3）和凸台（4）。 金属芯（1）具有可变直径结构，其包括从近端到远端的直线结构（1-3），阶梯结构（1-2）和线性结构（1-1） 。 线圈（2）的数量是一个或多个，并且线圈固定在金属芯的远端处的直线结构（1-1）和台阶结构（1-2）上 1）。 输送元件（3）的数量是一个或多个，并且输送元件固定到金属芯（1）的台阶结构（1-2）上。 凸台（4）固定在金属芯（1）的分拣元件（3）后面的台阶结构（1-2）上。 当医疗导丝传送植入物仪器时，医疗导丝上的输送元件通过摩擦植入器械的内壁而使植入器械的每个部分接收均匀的阻力，从而将植入器械整体地输送到人体腔内。

    SURGICAL APPARATUS FOR ANEURYSMS
    2.
    发明申请
    SURGICAL APPARATUS FOR ANEURYSMS 审中-公开
    外科手术装置

    公开(公告)号：US20130066413A1

    公开(公告)日：2013-03-14

    申请号：US13581728

    申请日：2011-03-02

    申请人： Qiaorong Jin ,  Yu Li ,  Sen Wang ,  Zhiyong Xie ,  Qiyi Luo

    发明人： Qiaorong Jin ,  Yu Li ,  Sen Wang ,  Zhiyong Xie ,  Qiyi Luo

    IPC分类号： A61F2/84 ,  A61F2/88

    CPC分类号： A61B17/12118 ,  A61B2017/1205 ,  A61F2/90 ,  A61F2/966 ,  A61F2002/823 ,  A61F2250/0015

    摘要： The present application discloses a surgical apparatus for aneurysms comprising: a stent, a delivery guide wire, an introducer sheath and a microcatheter, wherein: the stent is a self-expanding stent; the delivery guide wire outside of which the stent is restrained to is provided in a lumen of the introducer sheath; the introducer sheather is connected with the microcatheter, with lumnes communicating, to form a passageway through which the delivery guide wire and the stent are delivered into a human body. The surgical apparatus for aneurysms provided in the examples of the present application is able to deliver and release the stent which has high density and is super soft to a vascular lesion. A lattice structure of the stent is of high coverage at the vascular lesion such that the stent released into the vessel prodeces the same effects as healing of parent vessel, and thus improves the treatment of vascular aneurysms.

    摘要翻译： 本申请公开了一种用于动脉瘤的手术装置，包括：支架，输送导丝，导引鞘和微导管，其中：支架是自扩张支架; 引导器鞘的内腔中设置有限制支架的输出导丝， 引导器护套与微导管连接，柱子连通，形成通道，输送导丝和支架通过该通道输送到人体内。 在本申请的实施例中提供的用于动脉瘤的外科手术装置能够输送和释放具有高密度且对于血管损伤是超柔软的支架。 支架的格子结构在血管损伤处具有高覆盖度，使得释放到血管中的支架产生与母体血管愈合相同的效果，从而改善血管动脉瘤的治疗。

    Method to reduce metal fuse thickness without extra mask
    5.
    发明授权
    Method to reduce metal fuse thickness without extra mask 有权
    减少金属保险丝厚度的方法，无需额外的掩模

    公开(公告)号：US09059174B2

    公开(公告)日：2015-06-16

    申请号：US12265595

    申请日：2008-11-05

    申请人： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

    发明人： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

    IPC分类号： H01L21/82 ,  H01L23/525 ,  H01L27/108

    CPC分类号： H01L23/5256 ,  H01L21/76892 ,  H01L23/5258 ,  H01L27/10894 ,  H01L2924/0002 ,  Y02E60/12 ,  H01L2924/00

    摘要： Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

    摘要翻译： 提供制造多层半导体结构的方法。 在一个实施例中，一种方法包括在半导体结构上沉积第一介电层，在第一介电层上沉积第一金属层，图案化第一金属层以形成多个第一金属线，以及在第 第一金属线和第一介电层。 该方法还包括在所选择的第一金属线上去除第二电介质层的一部分以暴露每个所选择的第一金属线的相应顶表面。 该方法还包括将所选择的第一金属线的厚度减小到小于未选择的第一金属线的厚度。 还提供了多层半导体结构。

    METHOD TO REDUCE METAL FUSE THICKNESS WITHOUT EXTRA MASK
    6.
    发明申请
    METHOD TO REDUCE METAL FUSE THICKNESS WITHOUT EXTRA MASK 有权
    降低金属保险丝厚度的方法，无需额外的掩模

    公开(公告)号：US20100109122A1

    公开(公告)日：2010-05-06

    申请号：US12265595

    申请日：2008-11-05

    申请人： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

    发明人： Hai Ding ,  Fuchao Wang ,  Zhiyong Xie

    IPC分类号： H01L23/525 ,  H01L21/768

    CPC分类号： H01L23/5256 ,  H01L21/76892 ,  H01L23/5258 ,  H01L27/10894 ,  H01L2924/0002 ,  Y02E60/12 ,  H01L2924/00

    摘要： Methods of fabricating a multi-layer semiconductor structure are provided. In one embodiment, a method includes depositing a first dielectric layer over a semiconductor structure, depositing a first metal layer over the first dielectric layer, patterning the first metal layer to form a plurality of first metal lines, and depositing a second dielectric layer over the first metal lines and the first dielectric layer. The method also includes removing a portion of the second dielectric layer over selected first metal lines to expose a respective top surface of each of the selected first metal lines. The method further includes reducing a thickness of the selected first metal lines to be less than a thickness of the unselected first metal lines. A multi-layer semiconductor structure is also provided.

    摘要翻译： 提供制造多层半导体结构的方法。 在一个实施例中，一种方法包括在半导体结构上沉积第一介电层，在第一介电层上沉积第一金属层，图案化第一金属层以形成多个第一金属线，以及在第 第一金属线和第一介电层。 该方法还包括在所选择的第一金属线上去除第二电介质层的一部分以暴露每个所选择的第一金属线的相应顶表面。 该方法还包括将所选择的第一金属线的厚度减小到小于未选择的第一金属线的厚度。 还提供了多层半导体结构。

    Method and device for producing carbon paper
    7.
    发明授权
    Method and device for producing carbon paper 有权
    生产碳纸的方法和装置

    公开(公告)号：US08652567B2

    公开(公告)日：2014-02-18

    申请号：US13474796

    申请日：2012-05-18

    申请人： Zhiyong Xie ,  Qizhong Huang ,  Zhean Su ,  Mingyu Zhang ,  Jianxun Chen ,  Boyun Huang

    发明人： Zhiyong Xie ,  Qizhong Huang ,  Zhean Su ,  Mingyu Zhang ,  Jianxun Chen ,  Boyun Huang

    IPC分类号： B05D3/02

    CPC分类号： D21H13/50 ,  C04B35/83 ,  C04B2235/425 ,  C04B2235/48 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/77

    摘要： A method for producing carbon paper, including: 1) employing a polyacrylonitrile-based carbon fiber as a reinforcing material, a phenolic resin or epoxy resin as a bonding agent, and molding and preparing the carbon fiber into a carbon fiber blank by a dry paper-making method; and 2) stacking and putting a product obtained in step 1) into a reaction furnace for deposition process, the pressure in the reaction furnace being 1 kPa to 1 atmosphere, with methane, propene, or liquefied petroleum gas as a carbon source gas, nitrogen or argon gas as a diluent gas, the concentration of the carbon source gas being 5-100%, the gas flow rate being 0.1-5 L/min, and the temperature in the reaction furnace being controlled at between 800° C. and 1100° C., and the time of deposition process being 1-5 h.

    摘要翻译： 一种生产碳纸的方法，包括：1）使用聚丙烯腈类碳纤维作为增强材料，酚醛树脂或环氧树脂作为粘合剂，并通过干纸将碳纤维成型和制备成碳纤维坯料 制作方法; 和2）将步骤1）中得到的产品堆放并放入用于沉积工艺的反应炉中，反应炉中的压力为1kPa至1大气压，其中甲烷，丙烯或液化石油气为碳源气体，氮气 或氩气作为稀释气体，碳源气体的浓度为5〜100％，气体流量为0.1〜5L / min，反应炉内的温度控制在800℃〜1100℃ ℃，沉积时间为1-5小时。