公开(公告)号：US09206032B1

公开(公告)日：2015-12-08

申请号：US14637056

申请日：2015-03-03

Applicant: Yu-Fu Kang ,  Chiung-C. Lo

Inventor： Yu-Fu Kang ,  Chiung-C. Lo

IPC: B81B3/00

CPC classification number: B81B7/0058

Abstract: The present invention discloses a MEMS chip which includes a device wafer and a cap wafer. The device wafer includes a first substrate and a MEMS device. The MEMS device includes a movable structure. The cap wafer includes a second substrate, an elastic structure and a stopper. The stopper is connected to the second substrate by the elastic structure. The stopper constrains a movement of the movable structure, and when the movable structure contacts the stopper, the elastic structure provides a resilience force to the stopper.

Abstract translation: 本发明公开了一种包括器件晶片和盖晶片的MEMS芯片。 器件晶片包括第一衬底和MEMS器件。 MEMS器件包括可移动结构。 盖晶片包括第二基板，弹性结构和止动件。 止动件通过弹性结构连接到第二基板。 止动器限制可移动结构的移动，并且当可移动结构接触止动件时，弹性结构向止动件提供弹性力。

公开(公告)号：US20100187557A1

公开(公告)日：2010-07-29

申请号：US12361426

申请日：2009-01-28

Applicant: Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

Inventor： Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

IPC: H01L33/00 ,  H01L31/0232 ,  H01L29/84 ,  H01L31/02 ,  H01L29/66

CPC classification number: H01L31/18 ,  H01L27/144 ,  H01L31/101 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2924/00014

Abstract: The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.

Abstract translation: 本发明提供用于制造微型低功率光传感器的系统，装置和方法。 利用本发明，在硅晶片的正面上制造诸如二极管的光敏元件。 从晶片的前侧到晶片的背面的连接通过硅通孔提供。 然后将焊料凸块放置在晶片的背面，以提供与印刷电路板的耦合。 本发明中描述的技术也可以应用于其他类型的半导体器件，例如发光二极管，图像传感器，压力传感器和流量传感器。

公开(公告)号：US08405115B2

公开(公告)日：2013-03-26

申请号：US12361426

申请日：2009-01-28

Applicant: Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

Inventor： Arkadii V. Samoilov ,  Albert Bergemont ,  Chiung-C. Lo ,  Prashanth Holenarsipur ,  James Patrick Long

IPC: H01L33/00

CPC classification number: H01L31/18 ,  H01L27/144 ,  H01L31/101 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2924/00014

Abstract: The present invention provides systems, devices and methods for fabricating miniature low-power light sensors. With the present invention, a light sensitive component, such as a diode, is fabricated on the front side of a silicon wafer. Connectivity from the front side of the wafer to the back side of the wafer is provided by a through silicon via. Solder bumps are then placed on the back side of the wafer to provide coupling to a printed circuit board. The techniques described in the present invention may also be applied to other types of semiconductor devices, such as light-emitting diodes, image sensors, pressure sensors, and flow sensors.

Abstract translation: 本发明提供用于制造微型低功率光传感器的系统，装置和方法。 利用本发明，在硅晶片的正面上制造诸如二极管的光敏元件。 从晶片的前侧到晶片的背面的连接通过硅通孔提供。 然后将焊料凸块放置在晶片的背面，以提供与印刷电路板的耦合。 本发明中描述的技术也可以应用于其他类型的半导体器件，例如发光二极管，图像传感器，压力传感器和流量传感器。