公开(公告)号：US20230361526A1

公开(公告)日：2023-11-09

申请号：US18190318

申请日：2023-03-27

申请人： Yuanjie Semiconductor Technology Co., Ltd.

发明人： Mahui LI ,  YENTING PAN ,  Yao MU ,  Yuchen SHI ,  Haichao ZHANG

IPC分类号： H01S5/50 ,  H01S5/026 ,  H01S5/00

CPC分类号： H01S5/0064 ,  H01S5/0085 ,  H01S5/0265 ,  H01S5/50

摘要： The disclosure belongs to the technical field of photoelectric emission in semiconductors, and discloses an electro-absorption modulated laser chip and a fabrication method thereof, which can solve the problems of signal distortion caused by optical crosstalk between components in an existing electro-absorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA), and failure in longer-distance transmission. The laser chip includes: a laser light source; an electro-absorption modulator disposed on a light-emitting side of the laser light source; a semiconductor optical amplifier disposed on a light-emitting side of the electro-absorption modulator; and at least one isolation assembly disposed between the laser light source and the electro-absorption modulator, and/or, disposed between the electro-absorption modulator and the semiconductor optical amplifier, and configured to isolate optical crosstalk among the laser light source, the electro-absorption modulator, and the semiconductor optical amplifier. The disclosure is used for the electro-absorption modulated laser chip.