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    Method of making large surface area filaments for the production of polysilicon in a CVD reactor
    1.
    发明授权
    Method of making large surface area filaments for the production of polysilicon in a CVD reactor 有权
    制造用于在CVD反应器中生产多晶硅的大表面积细丝的方法

    公开(公告)号：US08647432B2

    公开(公告)日：2014-02-11

    申请号：US13186579

    申请日：2011-07-20

    申请人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P Khattak

    发明人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P Khattak

    IPC分类号： C30B25/12

    CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/458 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/104

    摘要： A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

    摘要翻译： 通过化学气相沉积（CVD）制造用于制造块状多晶硅的大表面积硅丝的方法包括熔融硅并通过使用成形模的EFG法从熔融硅生长细丝。 硅丝的截面形状在其轴向长度上恒定在10％的公差之内。 在实施例中，使用多个成型模具同时生长多个相同和/或不同的长丝。 长丝可以是管状的。 长丝横截面可以是环形的和/或可以包括向外延伸的翅片，壁和/或翅片厚度恒定在10％以内。 可以使用元素周期表的第3和5族中的至少一种元素掺杂长丝。 长丝可以具有等于指定的细长杆长度的长度，以及不大于细杆阻抗的总阻抗。

    METHOD OF MAKING LARGE SURFACE AREA FILAMENTS FOR THE PRODUCTION OF POLYSILICON IN A CVD REACTOR
    3.
    发明申请
    METHOD OF MAKING LARGE SURFACE AREA FILAMENTS FOR THE PRODUCTION OF POLYSILICON IN A CVD REACTOR 有权
    在CVD反应器中制造多晶硅的大面积面膜的方法

    公开(公告)号：US20110271718A1

    公开(公告)日：2011-11-10

    申请号：US13186579

    申请日：2011-07-20

    申请人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P. Khattak

    发明人： Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra P. Khattak

    IPC分类号： C01B33/021 ,  C03B37/01

    CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/458 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/104

    摘要： A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

    摘要翻译： 通过化学气相沉积（CVD）制造用于制造块状多晶硅的大表面积硅丝的方法包括熔融硅并通过使用成形模的EFG法从熔融硅生长细丝。 硅丝的截面形状在其轴向长度上恒定在10％的公差之内。 在实施例中，使用多个成型模具同时生长多个相同和/或不同的长丝。 长丝可以是管状的。 长丝横截面可以是环形的和/或可以包括向外延伸的翅片，壁和/或翅片厚度恒定在10％以内。 可以使用元素周期表的第3和5族中的至少一种元素掺杂长丝。 长丝可以具有等于指定的细长杆长度的长度，以及不大于细杆阻抗的总阻抗。

    SOLIDIFICATION OF CRYSTALLINE SILICON FROM REUSABLE CRUCIBLE MOLDS
    4.
    发明申请
    SOLIDIFICATION OF CRYSTALLINE SILICON FROM REUSABLE CRUCIBLE MOLDS 审中-公开
    从可重复使用的溶胶中固结晶体硅

    公开(公告)号：US20090206233A1

    公开(公告)日：2009-08-20

    申请号：US12419515

    申请日：2009-04-07

    申请人： Santhana Raghavan Parthasarathy ,  Yuepeng Wan ,  Carl Chartier ,  Jonathan A. Talbott ,  Kedar Gupta

    发明人： Santhana Raghavan Parthasarathy ,  Yuepeng Wan ,  Carl Chartier ,  Jonathan A. Talbott ,  Kedar Gupta

    IPC分类号： B29C33/56

    CPC分类号： C30B11/002 ,  Y10T117/1032 ,  Y10T428/2495

    摘要： A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

    摘要翻译： 一种制造硅锭的方法，该方法使用至少两个模具件的多部分可重复使用的石墨坩埚，其被构造成用于组装到具有用作接收熔融硅的模具腔的内表面的开放顶模中; 从内表面去除或减少先前施加的剥离涂层，直到达到均匀光滑的光洁度; 用包含氮化硅的第一层脱模涂层涂覆内表面; 用包含悬浮在水中的二氧化硅的第二层脱模涂层涂覆内表面; 用包含氮化硅的第三层剥离涂层涂覆内表面; 固化所述坩埚上的脱模涂层; 在坩埚中铸造硅锭; 然后重复前面的步骤多次。

    Solidification of crystalline silicon from reusable crucible molds
    5.
    发明授权
    Solidification of crystalline silicon from reusable crucible molds 失效
    从可重复使用的坩埚模具中固结晶体硅

    公开(公告)号：US07540919B2

    公开(公告)日：2009-06-02

    申请号：US11394970

    申请日：2006-03-31

    申请人： Santhana Raghavan Parthasarathy ,  Yuepeng Wan ,  Carl Chartier ,  Jonathan A Talbott ,  Kedar P Gupta

    发明人： Santhana Raghavan Parthasarathy ,  Yuepeng Wan ,  Carl Chartier ,  Jonathan A Talbott ,  Kedar P Gupta

    IPC分类号： C30B25/12

    CPC分类号： C30B11/002 ,  Y10T117/1032 ,  Y10T428/2495

    摘要： A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

    摘要翻译： 一种制造硅锭的方法，该方法使用至少两个模具件的多部分可重复使用的石墨坩埚，其被构造成用于组装到具有用作接收熔融硅的模具腔的内表面的开放顶模中; 从内表面去除或减少先前施加的剥离涂层，直到达到均匀光滑的光洁度; 用包含氮化硅的第一层脱模涂层涂覆内表面; 用包含悬浮在水中的二氧化硅的第二层脱模涂层涂覆内表面; 用包含氮化硅的第三层剥离涂层涂覆内表面; 固化所述坩埚上的脱模涂层; 在坩埚中铸造硅锭; 然后重复前面的步骤多次。

    Increased polysilicon deposition in a CVD reactor
    6.
    发明申请
    Increased polysilicon deposition in a CVD reactor 有权
    在CVD反应器中增加多晶硅沉积

    公开(公告)号：US20070251455A1

    公开(公告)日：2007-11-01

    申请号：US11413425

    申请日：2006-04-28

    申请人： Yuepeng Wan ,  Santhana Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra Khattak

    发明人： Yuepeng Wan ,  Santhana Parthasarathy ,  Carl Chartier ,  Adrian Servini ,  Chandra Khattak

    IPC分类号： C23C16/00

    CPC分类号： C23C16/24 ,  C01B33/035 ,  C23C16/4418 ,  C23C16/458 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/104

    摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

    摘要翻译： 用于通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中在西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管 ，丝带和其他形状的横截面。 含硅气体，例如氯硅烷或硅烷，被分解并在长丝的热表面上形成硅沉积物。这些长丝的较大的起始表面积确保较高的生产速率，而不改变反应器尺寸，并且不增加数量和长度 的长丝。 现有的反应器仅需要适应或更换灯丝支架以使用新的灯丝。 通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。 这也使得灯丝的掺杂和简化新反应堆的电源。

    DRY CONVERSION OF HIGH PURITY ULTRAFINE SILICON POWDER TO DENSIFIED PELLET FORM FOR SILICON MELTING APPLICATIONS
    7.
    发明申请
    DRY CONVERSION OF HIGH PURITY ULTRAFINE SILICON POWDER TO DENSIFIED PELLET FORM FOR SILICON MELTING APPLICATIONS 审中-公开
    高纯度超细硅粉干燥转化成用于硅熔体应用的增稠颗粒形式

    公开(公告)号：US20110044842A1

    公开(公告)日：2011-02-24

    申请号：US12909353

    申请日：2010-10-21

    申请人： Kedar P. Gupta ,  Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Chandra Khattak

    发明人： Kedar P. Gupta ,  Yuepeng Wan ,  Santhana Raghavan Parthasarathy ,  Chandra Khattak

    IPC分类号： B22F3/02

    CPC分类号： C01B33/02 ,  C22B1/24 ,  C30B11/00 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

    摘要： A method for making bulk silicon material consisting of silicon pellets for making silicon ingots from an agglomerate-free source of high purity, ultra fine silicon powder includes feeding a controlled amount of silicon powder into a pellet die and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50-85% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

    摘要翻译： 一种用于制造由硅球粒组成的体积硅材料的方法，用于从无团聚体的高纯度超细硅粉源制造硅锭，包括将受控量的硅粉末进料到丸粒模具中，并在环境温度下用粉末干燥压实粉末， 压力以产生密度为元素硅的理论密度的约50-85％的重量，重量在约1.0克至约3.0克的范围内，直径在10mm至20mm的范围内，优选地 为约14mm，高度为5mm至15mm，优选为约10mm。

    APPLICATION METHOD OF SILICON POWDER AND RAW MATERIAL SILICON BRICK WITH GOOD FILLING PROPERTY IN MONO-CRYSTAL FURNACE OR MULTI-CRYSTAL FURNACE (amended)
    9.
    发明申请
    APPLICATION METHOD OF SILICON POWDER AND RAW MATERIAL SILICON BRICK WITH GOOD FILLING PROPERTY IN MONO-CRYSTAL FURNACE OR MULTI-CRYSTAL FURNACE (amended) 有权
    单晶硅或多晶玻璃中具有良好填充性能的硅粉和原料硅砖的应用方法（修订）

    公开(公告)号：US20110027159A1

    公开(公告)日：2011-02-03

    申请号：US12811270

    申请日：2009-06-22

    申请人： Tao Zhang ,  Yuepeng Wan ,  Dejing Zhong

    发明人： Tao Zhang ,  Yuepeng Wan ,  Dejing Zhong

    IPC分类号： C01B33/021 ,  C01B33/02 ,  C04B35/653

    CPC分类号： C22B61/00 ,  C22B1/248 ,  C30B28/06 ,  C30B29/06 ,  C30B35/007

    摘要： An application method of silicon powder and raw material silicon brick with good filling property in a mono-crystal or a multi-crystal furnace involves pressing silicon powder having a particle size of 0.1 to 100 micrometers into silicon brick having weighing 0.2 to 2,000,000 grams by cold or hot isostatic pressing, then charging it into a mono-crystal or multi-crystal furnace. The pressure range of cold isostatic pressing is 10 MPa to 800 MPa. The pressure range of hot isostatic pressing is 10 Mpa to 800 Mpa. The temperature range for the method is 30° C. to 1,400° C.; The raw material silicon brick is used as the original raw material of silicon crystal growth in the production of solar cells or semiconductor.

    摘要翻译： 在单晶或多晶体熔炉中具有良好填充性能的硅粉末和原料硅砖的涂布方法包括将具有0.1至100微米粒度的硅粉压制成具有0.2至2,000,000克重的硅砖 或热等静压，然后将其装入单晶或多晶体炉中。 冷等静压的压力范围为10 MPa〜800 MPa。 热等静压的压力范围为10 Mpa至800 Mpa。 该方法的温度范围为30°C至1400°C。 原料硅砖用作太阳能电池或半导体生产中硅晶体生长的原始原料。

    Isostatic pressing method for applying a silicon powder onto a silicon brick for silicon crystal growth in a mono-crystal or multi-crystal furnace
    10.
    发明授权
    Isostatic pressing method for applying a silicon powder onto a silicon brick for silicon crystal growth in a mono-crystal or multi-crystal furnace 有权
    在单晶或多晶体炉中将硅粉施加到硅砖上用于硅晶体生长的等静压法

    公开(公告)号：US08298468B2

    公开(公告)日：2012-10-30

    申请号：US12811270

    申请日：2009-06-22

    申请人： Tao Zhang ,  Yuepeng Wan ,  Dejing Zhong

    发明人： Tao Zhang ,  Yuepeng Wan ,  Dejing Zhong

    IPC分类号： C04B35/653 ,  C01B33/02

    CPC分类号： C22B61/00 ,  C22B1/248 ,  C30B28/06 ,  C30B29/06 ,  C30B35/007

    摘要： An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth includes pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick; and charging the pressed silicon brick into a furnace for silicon crystal growth. The furnace for silicon crystal growth may be a mono-crystal furnace for growing monocrystalline silicon or a multi-crystal furnace for growing polycrystalline silicon.

    摘要翻译： 将硅粉末作为硅晶体生长的原始原料的等静压压制方法包括将具有0.1〜1,000μm的粒径的硅粉末压入采用冷或热等静压的硅砖中以提供压制的硅砖; 并将压制的硅砖装入用于硅晶体生长的炉中。 用于硅晶体生长的炉可以是用于生长单晶硅的单晶炉或用于生长多晶硅的多晶体炉。