公开(公告)号：US20120076168A1

公开(公告)日：2012-03-29

申请号：US13309120

申请日：2011-12-01

Applicant: Yuichiro OKUNUKI

Inventor： Yuichiro OKUNUKI

IPC: H01S5/026

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/3235

Abstract: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of an in-medium wavelength of a-Si, and the second layer has a thickness ¼ of an in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract translation: 根据本发明的半导体激光器包括与谐振器的小面接触的λ/ 2电介质膜（电介质膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层具有第二层的介质内波长的厚度¼。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。

公开(公告)号：US20120269219A1

公开(公告)日：2012-10-25

申请号：US13533008

申请日：2012-06-26

Applicant: Yuichiro OKUNUKI

Inventor： Yuichiro OKUNUKI

IPC: H01S5/02

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/3235

Abstract: A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ: in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of an in-medium wavelength of a-Si, and the second layer has a thickness ¼ of a in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract translation: 根据本发明的半导体激光器包括与谐振器的小面接触的λ/ 2电介质膜（电介质膜的介质中波长，例如SiO 2，Si 3 N 4，Al 2 O 3和AlN） 以及设置在电介质膜上的第一介电双层膜，其包括第一层a-Si和第二层折射率低于a-Si的材料。 第一层具有a-Si的介质内波长的厚度¼，第二层的厚度为第二层的介质内波长的1/4。 因此，可以将第一电介质双层膜牢固堆叠并以高产率形成高反射率膜。