公开(公告)号：US20080179683A1

公开(公告)日：2008-07-31

申请号：US12025504

申请日：2008-02-04

申请人： Yuichiro SASAKI ,  Katsumi OKASHITA ,  Keiichi NAKAMOTO ,  Hiroyuki ITO ,  Bunji MIZUNO

发明人： Yuichiro SASAKI ,  Katsumi OKASHITA ,  Keiichi NAKAMOTO ,  Hiroyuki ITO ,  Bunji MIZUNO

IPC分类号： H01L21/42 ,  H01L29/78 ,  H01L27/00

CPC分类号： H01L29/785 ,  H01L29/66803 ,  H01L29/78621

摘要： A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

公开(公告)号：US20100330782A1

公开(公告)日：2010-12-30

申请号：US12853840

申请日：2010-08-10

申请人： Yuichiro SASAKI ,  Katsumi OKASHITA ,  Keiichi NAKAMOTO ,  Hiroyuki ITO ,  Bunji MIZUNO

发明人： Yuichiro SASAKI ,  Katsumi OKASHITA ,  Keiichi NAKAMOTO ,  Hiroyuki ITO ,  Bunji MIZUNO

IPC分类号： H01L21/762 ,  H01L21/18

CPC分类号： H01L29/785 ,  H01L29/66803 ,  H01L29/78621

摘要： A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

摘要翻译： 在基板上形成具有上表面和侧面的半导体区域。 第一杂质区形成在半导体区域的上部。 第二杂质区域形成在半导体区域的侧部。 第二杂质区的电阻率基本上等于或小于第一杂质区的电阻率。