Discrete and integrated photo voltaic solar cells
    10.
    发明申请
    Discrete and integrated photo voltaic solar cells 有权
    离散和集成的光伏太阳能电池

    公开(公告)号:US20050145274A1

    公开(公告)日:2005-07-07

    申请号:US10958698

    申请日:2004-10-04

    摘要: A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.

    摘要翻译: 光伏(PV)电池器件包括第一半导体衬底; 接合到第一半导体衬底的第二半导体衬底; 绝缘层,设置在所述第一和第二基板之间以将所述第一基板与所述第二基板电隔离; 限定在第一基板上的多个PV电池,每个PV电池包括n型区域和p型区域; 设置在所述第一基板中以分离所述PV电池的多个垂直沟槽,所述垂直沟槽终止于所述绝缘层; 设置在所述垂直沟槽内的多个隔离结构,每个隔离结构包括包括氧化物的第一隔离层和包括多晶硅的第二隔离层; 以及图案化以连接PV电池以提供X个串联的PV电池并且Y个PV电池并联的互连层。 通过进行砷的离子注入形成n型区域,为n型区域提供浅的结深度,使PV电池器件针对阳光进行优化。