公开(公告)号：US20050145274A1

公开(公告)日：2005-07-07

申请号：US10958698

申请日：2004-10-04

申请人： Nestore Polce ,  Ronald Clark ,  Nathan Zommer

发明人： Nestore Polce ,  Ronald Clark ,  Nathan Zommer

IPC分类号： H01L27/142 ,  H01L31/00 ,  H01L31/048 ,  H01L31/05

CPC分类号： H01L31/0508 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.

摘要翻译： 光伏（PV）电池器件包括第一半导体衬底; 接合到第一半导体衬底的第二半导体衬底; 绝缘层，设置在所述第一和第二基板之间以将所述第一基板与所述第二基板电隔离; 限定在第一基板上的多个PV电池，每个PV电池包括n型区域和p型区域; 设置在所述第一基板中以分离所述PV电池的多个垂直沟槽，所述垂直沟槽终止于所述绝缘层; 设置在所述垂直沟槽内的多个隔离结构，每个隔离结构包括包括氧化物的第一隔离层和包括多晶硅的第二隔离层; 以及图案化以连接PV电池以提供X个串联的PV电池并且Y个PV电池并联的互连层。 通过进行砷的离子注入形成n型区域，为n型区域提供浅的结深度，使PV电池器件针对阳光进行优化。

公开(公告)号：US08334451B2

公开(公告)日：2012-12-18

申请号：US10958698

申请日：2004-10-04

申请人： Nestore Polce ,  Ronald P. Clark ,  Nathan Zommer

发明人： Nestore Polce ,  Ronald P. Clark ,  Nathan Zommer

IPC分类号： H01L31/00

CPC分类号： H01L31/0508 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.

摘要翻译： 光伏（PV）电池器件包括第一半导体衬底; 接合到第一半导体衬底的第二半导体衬底; 绝缘层，设置在所述第一和第二基板之间以将所述第一基板与所述第二基板电隔离; 限定在第一基板上的多个PV电池，每个PV电池包括n型区域和p型区域; 设置在所述第一基板中以分离所述PV电池的多个垂直沟槽，所述垂直沟槽终止于所述绝缘层; 设置在所述垂直沟槽内的多个隔离结构，每个隔离结构包括包括氧化物的第一隔离层和包括多晶硅的第二隔离层; 以及图案化以连接PV电池以提供X个串联的PV电池并且Y个PV电池并联的互连层。 通过进行砷的离子注入形成n型区域，为n型区域提供浅的结深度，使PV电池器件针对阳光进行优化。

公开(公告)号：US20050133081A1

公开(公告)日：2005-06-23

申请号：US10994172

申请日：2004-11-19

申请人： Michael Amato ,  Nestore Polce ,  Nathan Zommer

发明人： Michael Amato ,  Nestore Polce ,  Nathan Zommer

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L31/0504 ,  H01L31/02021 ,  H01L31/0465 ,  H01L31/0475 ,  Y02E10/50

摘要： A photovoltaic (PV) device comprising a silicon-on-insulator (SOI) substrate including a first substrate, a second substrate, and an insulating layer provided between the first and second substrates; a plurality of tubs defined using the first substrate, each tub being isolated from an adjacent tub using the insulation layer and an isolation structure; a first PV array including a plurality of PV cells to generate a first voltage when light is shined on the first PV array; a second PV array including a plurality of PV cells to generate a second voltage when the light is shined on the second PV array; a transistor defined on one of the tubs and coupled to the first and second PV arrays, wherein the first PV array is configured to provide a given voltage to the transistor when the second PV array is generating the second voltage.

摘要翻译： 一种包括绝缘体上硅（SOI）衬底的光伏（PV）器件，包括第一衬底，第二衬底和设置在第一和第二衬底之间的绝缘层; 使用所述第一基板限定的多个桶，每个桶使用所述绝缘层和隔离结构与相邻的桶隔离; 第一PV阵列，包括多个PV电池，以在第一PV阵列上照射光时产生第一电压; 第二PV阵列，包括当光照射在第二PV阵列上时产生第二电压的多个PV电池; 限定在所述桶中的一个并耦合到所述第一和第二PV阵列的晶体管，其中所述第一PV阵列被配置为当所述第二PV阵列产生所述第二电压时，向所述晶体管提供给定的电压。

公开(公告)号：US6037602A

公开(公告)日：2000-03-14

申请号：US23899

申请日：1998-02-13

申请人： Nestore Polce

发明人： Nestore Polce

IPC分类号： H01L27/14 ,  G02B27/00 ,  H01L21/302 ,  H01L21/822 ,  H01L25/16 ,  H01L27/04 ,  H01L27/144 ,  H01L31/00 ,  H01L31/02 ,  H01L31/05 ,  H01L31/10 ,  H01L31/12 ,  H03K17/78 ,  G02B29/00

CPC分类号： H01L25/167 ,  H01L27/144 ,  H01L27/1443 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L31/02019

摘要： A solid state photovoltaic generator circuit includes a source of activating radiation, an array of photodiodes responsive to the radiation, a switching device coupled to the photodiode array for responding to an electrical signal therefrom, and a high-impedance resistor which is made of substantially single-crystal silicon and is formed during the formation of the switching device. The fabrication of the circuit is thus significantly simplified and the resistor performance is stable over a wide range of operating temperatures.

摘要翻译： 固态光伏发电机电路包括激活辐射源，响应于辐射的光电二极管阵列，耦合到光电二极管阵列的开关装置，用于响应于其电信号;以及高阻抗电阻器，其基本上由单个 并且在形成开关器件期间形成。 因此，电路的制造被显着简化，并且电阻器性能在宽的工作温度范围内是稳定的。