公开(公告)号：US20220013671A1

公开(公告)日：2022-01-13

申请号：US17372810

申请日：2021-07-12

申请人： Yuji Zhao ,  Chen Yang ,  Houqiang Fu ,  Xuanqi Huang ,  Kai Fu

发明人： Yuji Zhao ,  Chen Yang ,  Houqiang Fu ,  Xuanqi Huang ,  Kai Fu

IPC分类号： H01L29/808 ,  H01L29/20 ,  H01L29/10 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/308

摘要： Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

公开(公告)号：US11495694B2

公开(公告)日：2022-11-08

申请号：US17372810

申请日：2021-07-12

申请人： Yuji Zhao ,  Chen Yang ,  Houqiang Fu ,  Xuanqi Huang ,  Kai Fu

发明人： Yuji Zhao ,  Chen Yang ,  Houqiang Fu ,  Xuanqi Huang ,  Kai Fu

IPC分类号： H01L29/808 ,  H01L29/20 ,  H01L29/10 ,  H01L21/308 ,  H01L29/66 ,  H01L21/3065

摘要： Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

公开(公告)号：US20210202257A1

公开(公告)日：2021-07-01

申请号：US17072622

申请日：2020-10-16

申请人： Yuji Zhao ,  Houqiang Fu ,  Kai Fu

发明人： Yuji Zhao ,  Houqiang Fu ,  Kai Fu

IPC分类号： H01L21/30 ,  H01L23/58 ,  H01L29/20 ,  H01L29/861 ,  H01L21/324 ,  H01L29/66

摘要： A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

公开(公告)号：US11527573B2

公开(公告)日：2022-12-13

申请号：US17215282

申请日：2021-03-29

申请人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

发明人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

IPC分类号： H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  H01L29/66 ,  H01L29/861 ,  H01L29/20

摘要： A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

公开(公告)号：US20210242281A1

公开(公告)日：2021-08-05

申请号：US17215282

申请日：2021-03-29

申请人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

发明人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

IPC分类号： H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  H01L29/66 ,  H01L29/861 ,  H01L29/20

摘要： A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

公开(公告)号：US20210104603A1

公开(公告)日：2021-04-08

申请号：US17031342

申请日：2020-09-24

申请人： Yuji Zhao ,  Kai Fu ,  Houqiang Fu

发明人： Yuji Zhao ,  Kai Fu ,  Houqiang Fu

IPC分类号： H01L29/06 ,  H01L21/30 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L29/20 ,  H01L29/872 ,  H01L29/735 ,  H01L29/808

摘要： Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n+-GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.

公开(公告)号：US11626483B2

公开(公告)日：2023-04-11

申请号：US17031342

申请日：2020-09-24

申请人： Yuji Zhao ,  Kai Fu ,  Houqiang Fu

发明人： Yuji Zhao ,  Kai Fu ,  Houqiang Fu

IPC分类号： H01L29/06 ,  H01L21/30 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L29/20 ,  H01L29/872 ,  H01L29/808 ,  H01L29/735

摘要： Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n+-GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.

公开(公告)号：US11417529B2

公开(公告)日：2022-08-16

申请号：US17072622

申请日：2020-10-16

申请人： Yuji Zhao ,  Houqiang Fu ,  Kai Fu

发明人： Yuji Zhao ,  Houqiang Fu ,  Kai Fu

IPC分类号： H01L29/00 ,  H01L21/30 ,  H01L23/58 ,  H01L29/66 ,  H01L29/861 ,  H01L21/324 ,  H01L29/20

摘要： A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

公开(公告)号：US10964749B2

公开(公告)日：2021-03-30

申请号：US16666978

申请日：2019-10-29

申请人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

发明人： Kai Fu ,  Houqiang Fu ,  Yuji Zhao

IPC分类号： H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  H01L29/66 ,  H01L29/861 ,  H01L29/20

摘要： A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

公开(公告)号：US20200295214A1

公开(公告)日：2020-09-17

申请号：US16818659

申请日：2020-03-13

申请人： Jossue Montes ,  Chen Yang ,  Houqiang Fu ,  Jingan Zhou ,  Yuji Zhao

发明人： Jossue Montes ,  Chen Yang ,  Houqiang Fu ,  Jingan Zhou ,  Yuji Zhao

IPC分类号： H01L31/072 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/18

摘要： A pn heterojunction diode includes a p-GaN substrate, a layer of β-Ga2O3 on a surface of the p-GaN substrate, an n contact disposed on a surface of the β-Ga2O3 layer opposite the p-GaN substrate, and a p contact disposed on the surface of the p-GaN substrate and proximate the GaN substrate. Fabricating a pn heterojunction diode includes depositing a metal on a first surface of a β-Ga2O3 wafer to form a first contact on the first surface of the β-Ga2O3 wafer, adhering the first contact to an adhesive material, thereby exposing a second surface of the β-Ga2O3 wafer, wherein the second surface is opposite the first surface, exfoliating layers of the β-Ga2O3 wafer from the second surface to yield an exfoliated surface on the β-Ga2O3 wafer, and contacting the exfoliated surface with a surface of a p-GaN substrate to yield a stack.