Vacuum thermal insulating valve
    3.
    发明授权
    Vacuum thermal insulating valve 失效
    真空保温阀

    公开(公告)号:US07673649B2

    公开(公告)日:2010-03-09

    申请号:US10597303

    申请日:2005-01-13

    IPC分类号: B65D81/20

    摘要: The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.

    摘要翻译: 本发明提供一种真空绝热阀,其可以在气体供给系统或排气系统中在高温下使用,并且由于其绝热性能优异,也可以制成大小小型的真空绝热阀。 使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱,上述真空保温箱S由方形的下部真空夹套S5形成, 圆筒形真空绝热管接收部分J的侧面并且其上表面打开,方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

    Rotary silicon wafer cleaning apparatus
    4.
    发明授权
    Rotary silicon wafer cleaning apparatus 有权
    旋转硅片清洗装置

    公开(公告)号:US07103990B2

    公开(公告)日:2006-09-12

    申请号:US10498800

    申请日:2003-09-11

    IPC分类号: F26B5/08

    CPC分类号: H01L21/67034 H01L21/02052

    摘要: It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.

    摘要翻译: 本发明的目的是提供一种旋转型硅晶片清洁装置,以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。 根据本发明,旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构,用于在后期化学清洗时用纯水清洗硅晶片,在外表面上进行干燥和氢终止处理 通过安装硅晶片干燥装置来执行硅晶片,所述硅晶片干燥装置包括附接到壳体的气体供应板,以供应氢气和含有大于0.05%的氢气的惰性气体的混合气体,混合气体供应 一端连接上述气体供给面板的气体混合器的管道,将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置, 在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基,从而喷出混合气体 在完成清洁之后,将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

    Low flow rate moisture supply process
    5.
    发明授权
    Low flow rate moisture supply process 失效
    低流量水分供应过程

    公开(公告)号:US06334962B1

    公开(公告)日:2002-01-01

    申请号:US09207763

    申请日:1998-12-09

    IPC分类号: C01B500

    CPC分类号: F22B1/003 C01B5/00

    摘要: A process of supplying moisture at low flow rates which permits high precision control of the flow of moisture to a semiconductor manufacturing line from an apparatus for the generation of moisture, characterized in that the flow of hydrogen to a moisture-generating reactor is controlled by means of a flow controller in such a way that an amount of hydrogen as fed is gradually increased from the start and reaches a specific set level such that when a specific time has passed, a predetermined rate of moisture begins to be produced and supplied to the semiconductor manufacturing line. The moisture is generated in the apparatus for generation of moisture in which hydrogen and oxygen are (a) fed into a reactor provided with a coat of platinum on the wall in the interior space, (b) enhanced in reactivity by the platinum catalytic action, and (c) caused to instantaneously react with each other at a temperature lower than the ignition point to produce moisture without undergoing combustion at a high temperature.

    摘要翻译: 以低流量供应水分的方法,其允许从用于产生水分的装置对半导体生产线的水分流的高精度控制,其特征在于,通过装置控制氢气流向产生水分的反应器 的流量控制器,使得所供给的氢气的量从开始逐渐增加并达到特定设定水平,使得当经过特定时间时,开始产生预定的水分率并将其供应到半导体 生产线。 在用于产生水分的装置中产生水分,其中(a)在内部空间的壁上被供给到设置有铂层的反应器的反应器中,(b)通过铂催化作用增强反应性, 和(c)在低于点火点的温度下彼此瞬间反应以产生湿气,而不会在高温下经历燃烧。

    Device for heating fluid controller
    6.
    发明授权
    Device for heating fluid controller 失效
    液体控制器加热装置

    公开(公告)号:US6060691A

    公开(公告)日:2000-05-09

    申请号:US062831

    申请日:1998-04-20

    IPC分类号: F16K49/00 H05B1/00

    CPC分类号: F16K49/002 Y10T137/6606

    摘要: A device for heating a fluid controller comprises a pair of platelike side heaters pressed respectively against a pair of opposite side faces of a body of the fluid controller with an insulating layer provided between each heater and each side face, a pair of side holding members each having a recessed portion for fitting the side heater therein and fastened to each other with screws to hold the controller body therebetween from opposite sides of the body, and a cushion member interposed between each side heater and a bottom face of the recessed portion for pressing the side heater against the controller body side face.

    摘要翻译: 用于加热流体控制器的装置包括一对板状侧加热器,其分别压在流体控制器的主体的一对相对侧面上,其中每个加热器和每个侧面之间设置有绝缘层,每对侧保持构件 具有用于将侧面加热器安装在其中的凹部,并且用螺钉彼此紧固以将控制器主体从身体的相对侧保持在其间;以及缓冲构件,其插入在每个侧加热器和凹部的底面之间,用于按压 侧加热器抵靠控制器主体侧面。

    Pressure type flow rate control apparatus
    7.
    发明授权
    Pressure type flow rate control apparatus 失效
    压力式流量控制装置

    公开(公告)号:US5791369A

    公开(公告)日:1998-08-11

    申请号:US812330

    申请日:1997-03-05

    摘要: A pressure type flow rate control apparatus (1) for controlling flow rate of a fluid maintains an upstream side pressure P1 of an orifice at more than about twice a downstream side pressure P2. In addition to an orifice-forming member (5) the apparatus includes a control valve (2) provided at the upstream side of the orifice, a pressure detector (3) provided between the control valve and the orifice, and an operation control device (6) for calculating a flow rate Qc from the detected pressure P1 of the pressure detector as Qc=KP1 (K being a constant) and issuing a difference as a control signal Qy between a flow rate command signal Qs and the calculated flow rate Qc to a drive unit of the control valve. The orifice upstream side pressure P1 is adjusted by opening and closing the control valve, thereby controlling the orifice downstream side flow rate.

    摘要翻译: 用于控制流体流量的压力型流量控制装置(1)将孔口的上游侧压力P1保持在下游侧压力P2的大约两倍。 除了孔口形成构件(5)之外,装置还包括设置在孔口上游侧的控制阀(2),设置在控制阀和孔之间的压力检测器(3)和操作控制装置 6),用于从Qc = KP1(K为常数)的压力检测器的检测压力P1计算流量Qc,并将差作为流量指令信号Qs与计算出的流量Qc之间的控制信号Qy发出, 控制阀的驱动单元。 通过打开和关闭控制阀来调节孔口上游侧压力P1,从而控制孔口下游侧流速。

    Pressure type flow rate control apparatus
    8.
    发明授权
    Pressure type flow rate control apparatus 失效
    压力式流量控制装置

    公开(公告)号:US5669408A

    公开(公告)日:1997-09-23

    申请号:US661181

    申请日:1996-06-10

    摘要: A pressure type flow rate control apparatus (1) for controlling flow rate of a fluid maintains an upstream side pressure P1 of an orifice at more than about twice a downstream side pressure P2. In addition to an orifice-forming member (5) the apparatus includes a control valve (2) provided at the upstream side of the orifice, a pressure detector (3) provided between the control valve and the orifice, and an operation control device (6) for calculating a flow rate Qc from the detected pressure P1 of the pressure detector as Qc=KP1 (K being a constant) and issuing a difference as a control signal Qy between a flow rate command signal Qs and the calculated flow rate Qc to a drive unit of the control valve. The orifice upstream side pressure P1 is adjusted by opening and closing the control valve, thereby controlling the orifice downstream side flow rate.

    摘要翻译: 用于控制流体流量的压力型流量控制装置(1)将孔口的上游侧压力P1保持在下游侧压力P2的大约两倍。 除了孔口形成构件(5)之外,装置还包括设置在孔口上游侧的控制阀(2),设置在控制阀和孔之间的压力检测器(3)和操作控制装置 6),用于从Qc = KP1(K为常数)的压力检测器的检测压力P1计算流量Qc,并将差作为流量指令信号Qs与计算出的流量Qc之间的控制信号Qy发出, 控制阀的驱动单元。 通过打开和关闭控制阀来调节孔口上游侧压力P1,从而控制孔口下游侧流速。

    Process of forming platinum coating catalyst layer in moisture-generating reactor
    9.
    发明授权
    Process of forming platinum coating catalyst layer in moisture-generating reactor 失效
    在产水反应堆中形成铂涂层催化剂层的工艺

    公开(公告)号:US07595087B2

    公开(公告)日:2009-09-29

    申请号:US10510758

    申请日:2003-10-14

    IPC分类号: G21C9/00

    摘要: A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.

    摘要翻译: 能够容易地且成本低廉地在发湿反应堆的内壁面上形成具有均匀厚度和对基材的粘合性优异的保护铂膜的保护膜的阻挡膜。 其中氢和氧反应产生水分而不进行高温燃烧的发湿反应器由含铝的合金制成。 通过在产生水分的反应器的内壁表面上进行铝选择性氧化处理,形成主要为氧化铝(Al 2 O 3)的阻挡膜,然后将铂膜层叠并粘贴在阻挡膜上,使铂 形成涂层催化剂层。