公开(公告)号：US20070010093A1

公开(公告)日：2007-01-11

申请号：US11160699

申请日：2005-07-06

申请人： Yun-Yu Wang ,  Christian Lavoie ,  Kevin Mello ,  Conal Murray ,  Matthew Oonk

发明人： Yun-Yu Wang ,  Christian Lavoie ,  Kevin Mello ,  Conal Murray ,  Matthew Oonk

IPC分类号： G01R31/26 ,  H01L21/44 ,  H01L21/66

CPC分类号： H01L21/76897 ,  H01L21/28518 ,  H01L21/76834

摘要： Silicide is protected during MC RIE etch by first forming an oxide film over the silicide and, after performing MC RIE etch, etching the oxide film. The oxide film is formed from a film of alloyed metal-silicon (M-Si) on the layer of silicide, then wet etching the metal-silicon. An ozone plasma treatment process can be an option to densify the oxide film. The oxide film may be etched by oxide RIE or wet etch, using 500:1 DHF.

摘要翻译： 在MC RIE蚀刻期间，硅化物被保护，首先在硅化物上形成氧化膜，并且在执行MC RIE蚀刻之后蚀刻氧化物膜。 氧化膜由硅化物层上的合金化金属硅（M-Si）的膜形成，然后湿式蚀刻金属硅。 臭氧等离子体处理方法可以是使氧化膜致密化的选择。 可以使用500:1的DHF，通过氧化物RIE或湿法蚀刻来蚀刻氧化膜。

公开(公告)号：US20060051959A1

公开(公告)日：2006-03-09

申请号：US10711298

申请日：2004-09-09

申请人： Michael Iwatake ,  Kevin Mello ,  Matthew Oonk ,  Amanda Piper ,  Yun Wang ,  Keith Wong

发明人： Michael Iwatake ,  Kevin Mello ,  Matthew Oonk ,  Amanda Piper ,  Yun Wang ,  Keith Wong

IPC分类号： H01L21/4763

CPC分类号： H01L21/28518 ,  H01L21/76877

摘要： A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.

摘要翻译： 通孔接触被提供到包括单晶半导体区域的衬底的顶表面处的扩散区域。 通孔接触包括第一层，其基本上由与顶表面上的扩散区接触的第一金属的硅化物组成。 电介质区域覆盖在第一层上，电介质区域具有外表面和从衬底的外表面延伸到顶表面的开口。 第二层将开口划线并与开口中的基板的顶表面接触，第二层包括将开口的侧壁排列的第二金属和与第二金属的顶表面自对准的第二金属的硅化物 基材在开口处。 扩散阻挡层覆盖开口内的第二层。 包括第三金属的第三层覆盖扩散阻挡层并填充开口。

公开(公告)号：US20070077753A1

公开(公告)日：2007-04-05

申请号：US11633299

申请日：2006-12-04

申请人： Michael Iwatake ,  Kevin Mello ,  Matthew Oonk ,  Amanda Piper ,  Yun Wang ,  Keith Wong

发明人： Michael Iwatake ,  Kevin Mello ,  Matthew Oonk ,  Amanda Piper ,  Yun Wang ,  Keith Wong

IPC分类号： H01L21/4763

CPC分类号： H01L21/28518 ,  H01L21/76877

摘要： A method is provided for fabricating a via contact structure contacting a single-crystal semiconductor diffusion region at a top surface of a substrate. In such method, a first layer is formed in contact with the diffusion region at the top surface, the first layer consisting essentially of a silicide of a first metal. A dielectric region is formed to overlie the first layer. An opening is etched in the dielectric region extending through the first layer to the diffusion region. A second layer is formed to line the opening, the second layer including a second metal. Thereafter, a conductor is deposited within the opening over the second layer, and the substrate is heated to cause the second metal to form a silicide at the top surface.

摘要翻译： 提供了一种用于制造在衬底的顶表面处接触单晶半导体扩散区的通孔接触结构的方法。 在这种方法中，第一层形成为与顶表面处的扩散区接触，第一层基本上由第一金属的硅化物组成。 形成介电区以覆盖第一层。 在延伸穿过第一层的电介质区域中蚀刻开口到扩散区域。 形成第二层以对开口进行排列，第二层包括第二金属。 此后，在第二层的开口内沉积导体，并且加热衬底以使第二金属在顶表面形成硅化物。