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    Cylinder cabinet and method of purging remaining gas in the pipe thereof
    1.
    发明授权
    Cylinder cabinet and method of purging remaining gas in the pipe thereof 有权
    气缸柜及其管道中剩余气体的吹扫方法

    公开(公告)号：US06698469B2

    公开(公告)日：2004-03-02

    申请号：US10180497

    申请日：2002-06-27

    申请人： Yutaka Sakamoto ,  Tsuneo Kano ,  Takashi Ogawa ,  Hiroshi Matsumura ,  Toshiaki Sango ,  Kiyoto Itoh ,  Norio Otake

    发明人： Yutaka Sakamoto ,  Tsuneo Kano ,  Takashi Ogawa ,  Hiroshi Matsumura ,  Toshiaki Sango ,  Kiyoto Itoh ,  Norio Otake

    IPC分类号： F17C1300

    CPC分类号： F17C13/04 ,  F17C2205/0323 ,  F17C2205/0332 ,  F17C2223/0123 ,  F17C2227/044 ,  F17C2270/0518

    摘要： A cylinder containing gas has a valve and is connected to a delivery side through a filling pipe, a primary pipe, a first air-operated valve, a pressure reducing valve, a secondary pipe, and a second air-operated valve. Inert gas flows into the primary pipe through an air-operated valve. The primary pipe is connected to a vacuum generator through an air-operated valve and a pipe. Gas remaining in the primary pipe is purged as exhaust gas by automatically repeating leaving-pipe-in-pressurized-state purge for pressurizing the inside of the primary pipe by the inert gas and leaving the pipe in this state for 2 to 10 minutes and evacuating the pipe for 20 seconds. Gas remaining in the primary pipe is purged with high-efficiency, and the vacuum generator is stopped while the inside of the primary pipe is pressurized in the leaving-pipe-in-pressurized-state purge and the just-before-replacement purge.

    摘要翻译： 含气体的气体具有阀，并且通过填充管，主管，第一气动阀，减压阀，副管和第二气动阀连接到输送侧。 惰性气体通过气动阀流入主管道。 主管通过气动阀和管连接到真空发生器。 主管中残留的气体通过自动重复离开管加压状态吹扫而被排出，通过惰性气体对主管内部进行加压，并在该状态下离开管道2至10分钟并排空 管道20秒。 在主管中剩余的气体被高效率地清除，并且在加压状态的排气管和刚刚更换前的吹扫中，主管内部被加压，真空发生器停止。

    Dry etching system for patterning target layer at high reproducibility and method of dry etching used therein
    2.
    发明授权
    Dry etching system for patterning target layer at high reproducibility and method of dry etching used therein 失效
    用于以高再现性对目标层进行图案的干蚀刻系统和其中使用的干蚀刻方法

    公开(公告)号：US06391789B2

    公开(公告)日：2002-05-21

    申请号：US09836649

    申请日：2001-04-17

    申请人： Toshiaki Sango

    发明人： Toshiaki Sango

    IPC分类号： H01L21302

    CPC分类号： H01J37/32082 ,  H01J37/3299 ,  H01J2237/2001 ,  H01L21/31053

    摘要： A dry etching is carried out for a single semiconductor wafer electrostatically attracted to a static chuck in the presence of a plasma, wherein a controlling system applies a relatively large direct current voltage to the static chuck when a lapse of time from the previous dry etching is longer than a critical lapse of time and when a place occupied by the single semiconductor wafer in a lot is equal to or less than a critical place so that micro-contact holes formed over the semiconductor wafers in the lot are fallen within a target diameter range.

    摘要翻译： 对于在等离子体存在下静电吸引到静态卡盘的单个半导体晶片进行干蚀刻，其中当从先前的干法蚀刻经过时间时，控制系统向静态卡盘施加相对较大的直流电压 长于临时的时间流逝，并且当多个单个半导体晶片占据的位置等于或小于临界位置时，使得形成在批次中的半导体晶片上的微接触孔落在目标直径范围内 。